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PBSS4032SPN

Description
30 V NPN/PNP low VCEsat (BISS) transistor
CategoryDiscrete semiconductor    The transistor   
File Size192KB,20 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PBSS4032SPN Overview

30 V NPN/PNP low VCEsat (BISS) transistor

PBSS4032SPN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOIC
package instructionPLASTIC, SOP-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)5.7 A
Collector-emitter maximum voltage30 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)150
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Number of components2
Number of terminals8
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
PBSS4032SPN
30 V NPN/PNP low V
CEsat
(BISS) transistor
Rev. 1 — 14 July 2010
Product data sheet
1. Product profile
1.1 General description
NPN/PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
PBSS4032SPN
SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4032SN
PNP/PNP
complement
PBSS4032SP
Type number
1.2 Features and benefits
Low collector-emitter saturation voltage V
CEsat
Optimized switching time
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 2.
Quick reference data
Conditions
open base
single pulse; t
p
1 ms
I
C
= 4 A; I
B
= 0.4 A
[1]
Symbol Parameter
TR1; NPN low V
CEsat
transistor
V
CEO
I
C
I
CM
R
CEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
45
Max
30
5.7
10
62.5
Unit
V
A
A
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