Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1054
DESCRIPTION
・With
TO-3PFa package
・Complement
to type 2SD1485
・High
transition frequency
・Wide
area of safe operation
APPLICATIONS
・For
high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
固电
导½
半
Collector-base voltage
HA
INC
Emitter-base voltage
Collector current
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-100
-100
-5
-5
-8
UNIT
V
V
V
A
A
Open collector
Collector current-peak
T
C
=25℃
60
W
3
150
-55~150
℃
℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB1054
MAX
UNIT
V
CEsat
Collector-emitter saturation voltage
I
C
=-3A ;I
B
=-0.3A
-2.0
V
V
BE
Base-emitter on voltage
I
C
=-3A ; V
CE
=-5V
-1.8
V
μA
I
CBO
Collector cut-off current
V
CB
=-100V; I
E
=0
-50
I
EBO
Emitter cut-off current
V
EB
=-3V; I
C
=0
-50
μA
h
FE-1
DC current gain
I
C
=-20mA ; V
CE
=-5V
20
h
FE -2
DC current gain
I
C
=-1A ; V
CE
=-5V
40
200
h
FE -3
DC current gain
C
OB
f
T
固电
IN
Output capacitance
导½
半
P
I
C
=-3A ; V
CE
=-5V
20
I
E
=0 ; V
CB
=-10V;f=1MHz
Transition frequency
h
FE-2
classifications
R
40-80
Q
ANG
CH
100-200
MIC
E SE
I
C
=-0.5A ; V
CE
=-5V
DUC
ON
170
20
OR
T
pF
MHz
60-120
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1054
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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