MCT210
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
DESCRIPTION
The MCT210 optically coupled isolator
consists of an infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
2.54
6.4
6.2
1.54
8.8
8.4
1
2
3
Dimensions in mm
6
5
4
4.3
4.1
0.5
0.3
7.8
7.4
0.5
3.3
9.6
8.4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BV
CBO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
30V
30V
6V
160mW
60mA
6V
105mW
OPTION SM
SURFACE MOUNT
OPTION G
5.08
max.
1.2
0.6
1.4
0.9
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
10.2
9.5
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91089-AAS/A2
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
( note 2 )
Collector-base Breakdown (BV
CBO
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR)
MIN TYP MAX UNITS
1.2
6
10
30
30
6
50
1.5
V
V
µ
A
V
V
V
nA
TEST CONDITION
I
F
= 40mA
I
R
= 10
µ
A
V
R
= 6V
I
C
= 1mA
I
C
= 10
µ
A
I
E
= 100
µ
A
V
CE
= 10V
3.2mA I
F
to 32mAI
F
,
0.4V V
CE
10mA I
F
, 5V V
CE
32mA I
F
, 16mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 5V , fig 1
I
C
= 2mA, R
L
= 100
Ω
Output
Coupled
50
150
%
%
0.4
V
V
RMS
V
PK
Ω
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Rise Time
Fall Time
t
r
t
f
4
5
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
V
CC
Input
R
L
= 100Ω
Output
Output
10%
t
r
t
f
t
on
t
off
10%
90%
90%
FIG 1
7/12/00
DB91089-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
2.8
Relative current transfer ratio
150
2.4
2.0
1.6
1.2
0.8
0.4
0
-30
0
25
50
75
100
125
1
Relative Current Transfer Ratio
vs. Forward Current
100
50
V
CE
= 0.4V
T
A
= 25°C
2
5
10
20
50
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
Current transfer ratio CTR (%)
70
Forward current I
F
(mA)
60
50
40
30
20
10
-30
0
25
50
75
100
125
Forward current I
F
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
2
5
10
20
50
V
CE
= 5V
T
A
= 25°C
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
Relative current transfer ratio
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.56
0.48
0.40
0.32
0.24
0.16
0.08
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
I
F
= 32mA
I
C
= 16mA
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
Collector-emitter saturation voltage V
I
F
= 10mA
V
CE
= 5V
CE(SAT)
(V)
DB91089-AAS/A2
stm32/stm8
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