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SIR-34ST3FL

Description
Infrared LED, 950nm
CategoryLED optoelectronic/LED    photoelectric   
File Size76KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance  
Download Datasheet Parametric View All

SIR-34ST3FL Overview

Infrared LED, 950nm

SIR-34ST3FL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Reach Compliance Codecompliant
Maximum forward current0.1 A
Maximum forward voltage1.6 V
JESD-609 codee3
Installation featuresTHROUGH HOLE MOUNT
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Optoelectronic device typesINFRARED LED
peak wavelength950 nm
Maximum reverse voltage5 V
Semiconductor materialGaAs
surface mountNO
Terminal surfaceMatte Tin (Sn)
perspective54 deg
SIR-34ST3F
Sensors
Infrared light emitting diode, top view type
SIR-34ST3F
The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
marking it ideal for compact optical control equipment.
Applications
Optical control equipment
Light source for remote control devices
Dimensions
(Unit : mm)
φ3.8±0.3
φ3.5
φ3.1±0.2
5.2±0.3
Features
1) Compact (φ3.1mm).
2) High efficiency, high output P
O
=8.0mW
(I
F
=50mA).
3) Wide radiation angle
θ=27°.
4) Emission spectrum well suited to silicon detectors
P
=950nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
2−
0.5
Min.24
2
1
(2.5)
2.5±1
Max.1
4−0.6
1.1
Notes:
1.
Unspecified tolerance
shall be
±0.2.
2. Dimension in parenthesis are
show for reference.
1 Anode
2 Cathode
Absolute maximum ratings
(Ta = 25°C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Pulse width=0.1msec, duty ratio 1%
Symbol
I
F
V
R
P
D
I
FP
Topr
Tstg
Limits
100
5
160
0.5
−25
to
+85
−40
to
+85
Unit
mA
V
mW
A
°C
°C
Rev.B
1/3

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