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2SA715B

Description
Small Signal Bipolar Transistor, 2.5A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-126MOD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size26KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SA715B Overview

Small Signal Bipolar Transistor, 2.5A I(C), 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-126MOD, 3 PIN

2SA715B Parametric

Parameter NameAttribute value
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)160 MHz
Base Number Matches1
2SA715
Silicon PNP Epitaxial
ADE-208-852 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SC1162
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C
Tj
Tstg
Rating
–35
–35
–5
–2.5
–3
0.75
10
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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