Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Maker | Microsemi |
| Parts packaging code | TO-3 |
| package instruction | , |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 14.5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 230 W |
| surface mount | NO |

| APT6045AN | APT5545AN | APT5540AN | APT6040AN | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| Maker | Microsemi | Microsemi | Microsemi | Microsemi |
| Parts packaging code | TO-3 | TO-3 | TO-3 | TO-3 |
| Contacts | 2 | 2 | 2 | 2 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| Configuration | Single | Single | Single | Single |
| Maximum drain current (Abs) (ID) | 14.5 A | 14.5 A | 15.5 A | 15.5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 230 W | 230 W | 230 W | 230 W |
| surface mount | NO | NO | NO | NO |