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AT-41533-TR1G

Description
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SMT, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size105KB,10 Pages
ManufacturerAVAGO
Websitehttp://www.avagotech.com/
Environmental Compliance  
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AT-41533-TR1G Overview

C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SMT, 3 PIN

AT-41533-TR1G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerAVAGO
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
highest frequency bandC BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10000 MHz
AT-41511, AT-41533
General Purpose, Low Noise NPN
Silicon Bipolar Transistors
Data Sheet
Description
Avago’s AT-41511 and AT-41533 are general purpose NPN
bipolar transistors that offer excellent high frequency
performance at an economical price. The AT-41533 uses
the 3 lead SOT-23, while the AT-41511 places the same
die in the lower parasitic 4 lead SOT-143. Both packages
are industry standard, and compatible with high volume
surface mount assembly techniques.
The 4 micron emitter-to-emitter pitch of these transistors
yields high performance products that can perform a
multiplicity of tasks. The 14 emitter finger interdigitated
geometry yields an intermediate-sized transistor with easy
to match to impedances, low noise figure, and moderate
power.
Optimized for best performace from a 5 to 8 volt bias
supply, these transistors are also good performers at 2.7
V. Applications include use in wireless systems as an LNA,
gain stage, buffer, oscillator, or active mixer.
An optimum noise match near 50 ohms at 900 MHz makes
these devices particularly easy to use as LNAs. Typical ampli-
fier designs at 900 MHz yield 1 dB noise figures with 15 dB
or more associated gain at a 5 V, 5 mA bias, with good gain
and noise figure obtainable at biases as low as 2 mA.
The AT-415 series bipolar transistors are fabricated using
Avago’s 10 GHz f
T
Self-Aligned-Transistor (SAT) process.
The die are nitride passivated for surface protection. Ex-
cellent device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
these devices.
Features
x
General Purpose NPN Bipolar Transistor
x
900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB G
A
AT-41533: 1 dB NF, 14.5 dB G
A
x
Characterized for 3, 5, and 8 Volt Use
x
SOT-23 and SOT-143 SMT Plastic Packages
x
Tape-and-Reel Packaging Option Available
x
Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
415x
BASE
EMITTER
SOT 143 (AT-41511)
COLLECTOR
415x
BASE
EMITTER
SOT 23 (AT-41533)
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.

AT-41533-TR1G Related Products

AT-41533-TR1G AT-41533-BLKG AT-41533-TR2G
Description C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SMT, 3 PIN C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SMT, 3 PIN C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SMT, 3 PIN
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker AVAGO AVAGO AVAGO
Parts packaging code SOT SOT SOT
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 6 6 6
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 12 V 12 V 12 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 30 30 30
highest frequency band C BAND C BAND C BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.225 W 0.225 W 0.225 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 10000 MHz 10000 MHz 10000 MHz
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