Product Specification
PE42543
Product Description
The PE42543 is a HaRP™ technology-enhanced
absorptive SP4T RF switch designed for use in Test/
ATE, microwave and other wireless applications. This
broadband general purpose switch is a pin-compatible
version of the PE42542 with faster switching time and
settling time. It exhibits low insertion loss, high isolation
and linearity performance from 9 kHz through 18
GHz. No blocking capacitors are required if DC voltage is
not present on the RF ports.
The PE42543 is manufactured on Peregrine’s
UltraCMOS
®
process, a patented variation of silicon-on-
insulator (SOI) technology on a sapphire substrate.
Peregrine’s HaRP technology enhancements deliver high
linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the
performance of GaAs with the economy and integration
of conventional CMOS.
UltraCMOS
®
SP4T RF Switch
9 kHz–18 GHz
Features
HaRP technology-enhanced
Fast settling time
No gate and phase lag
No drift in insertion loss and phase
Fast switching time of 500 ns
Low insertion loss
1.20 dB @ 3 GHz
2.30 dB @ 13.5 GHz
2.70 dB @ 16 GHz
3.20 dB @ 18 GHz
High isolation
55 dB @ 3 GHz
32 dB @ 13.5 GHz
28 dB @ 16 GHz
25 dB @ 18 GHz
ESD performance
Figure 1. Functional Diagram
2500V HBM on all pins
150V MM on all pins
250V CDM on all pins
Figure 2. Package Type
29-lead 4
4
mm LGA
DOC-62642
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Page 1 of 14
PE42543
Product Specification
Table 1. Electrical Specifications @ 25°C (Z
S
= Z
L
= 50Ω ), unless otherwise noted
Normal Mode
1
: V
DD
= 3.3V, V
SS_EXT
= 0V or Bypass Mode
2
: V
DD
= 3.4V, V
SS_EXT
= –3.4V
Parameter
Operating frequency
9 kHz–10 MHz
10–3000 MHz
3000–7500 MHz
7500–10000 MHz
10000–13500 MHz
13500–16000 MHz
16000–18000 MHz
9 kHz–10 MHz
10–3000 MHz
3000–7500 MHz
7500–10000 MHz
10000–13500 MHz
13500–16000 MHz
16000–18000 MHz
9 kHz–10 MHz
10–3000 MHz
3000–7500 MHz
7500–10000 MHz
10000–13500 MHz
13500–16000 MHz
16000–18000 MHz
9 kHz–10 MHz
10–3000 MHz
3000–18000 MHz
9 kHz–18000 MHz
80
53
46
41
36
31
27
78
54
41
36
31
27
24
Path
Condition
Min
9k
0.70
1.20
1.65
2.10
2.30
2.70
3.20
90
55
48
43
38
33
29
90
55
42
38
32
28
25
22
15
14
14
Fig. 4
10–18000 MHz
10–18000 MHz
50% CTRL to 0.05 dB final value
50% CTRL to 90% or 10% of final value
113
59
2
500
3
800
Typ
Max
18 G
0.85
1.50
2.05
2.55
2.80
3.20
3.90
Unit
Hz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
µs
ns
Insertion loss
RFC–RFX
Isolation
RFX–RFX
Isolation
RFC–RFX
Return loss
(active and common port)
Return loss
(terminated port)
Input 0.1dB compression point
3
Input IP2
Input IP3
Settling time
Switching time
RFC–RFX
RFX
RFC–RFX
RFC–RFX
RFC–RFX
Notes: 1. Normal mode: connect V
SS_EXT
(pin 29) to GND (V
SS_EXT
= 0V) to enable internal negative voltage generator.
2. Bypass mode: use V
SS_EXT
(pin 29) to bypass and disable internal negative voltage generator.
3. The input 0.1dB compression point is a linearity figure of merit. Refer to
Table 3
for the RF input power P
MAX
(50Ω).
©2013-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 14
Document No. DOC-12314-2
│
UltraCMOS
®
RFIC Solutions
PE42543
Product Specification
Figure 3. Pin Configuration (Top View)
Table 3. Operating Ranges
Parameter
Normal mode
1
(V
SS_EXT
= 0V)
Supply voltage
Supply current
V
DD
I
DD
2.3
120
5.5
200
V
uA
Symbol
Min
Typ
Max
Unit
Bypass mode
2
(V
SS_EXT
= –3.4V)
Supply voltage
(V
DD
≥
3.4V for
Table 1
full spec. compliance)
Supply current
Negative supply voltage
Negative supply current
Normal or Bypass mode
Digital input high
(V1, V2)
Digital input low
(V1, V2)
RF input power,
CW (RFC–RFX)
3
9 kHz–27.5 MHz
≥
27.5 MHz–18 GHz
V
IH
V
IL
1.17
–0.3
3.6
0.6
V
V
V
DD
I
DD
V
SS_EXT
I
SS
–3.6
–40
–16
2.7
3.4
50
5.5
80
–3.2
V
uA
V
uA
P
MAX,CW
Fig. 4
30
dBm
dBm
Table 2. Pin Descriptions
Pin #
1, 3–6, 8–11,
13–16,
18–21, 23,
25, 26
2
7
12
17
22
24
27
28
29
Pad
Pin
Name
Description
RF input power, pulsed
(RFC–RFX)
4
9 kHz–27.5 MHz
≥
27.5 MHz–18 GHz
RF input power into
terminated ports, CW
(RFX)
3
9 kHz–18.8 MHz
≥
18.8 MHz–18 GHz
Operating temperature
range
P
MAX,PULSED
Fig. 4
32
dBm
dBm
GND
Ground
P
MAX,TERM
Fig. 4
20
T
OP
–40
+25
+85
dBm
dBm
°C
RF2
1
RF4
1
RFC
1
RF3
1
RF1
1
V
DD
V2
V1
V
SS_EXT2
GND
RF port 2
RF port 4
RF common
RF port 3
RF port 1
Supply voltage (nominal 3.3V)
Digital control logic input 2
Digital control logic input 1
External V
SS
negative voltage control
Exposed pad: Ground for proper operation
Notes: 1. Normal mode: connect V
SS_EXT
(pin 29) to GND (V
SS_EXT
= 0V) to
enable internal negative voltage generator
2. Bypass mode: use V
SS_EXT
(pin 29) to bypass and disable internal
negative voltage generator
3. 100% duty cycle, all bands, 50Ω
4.
Pulsed, 5% duty cycle of 4620 µs period, 50Ω
Notes: 1. RF pins 2, 7, 12, 17, and 22 must be at 0 VDC. The RF pins do not
require DC blocking capacitors for proper operation if the 0 VDC
requirement is met.
2. Use V
SS_EXT
(pin 29) to bypass and disable internal negative voltage
generator. Connect V
SS_EXT
(pin 29) to GND (V
SS_EXT
= 0V) to enable
internal negative voltage generator.
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PE42543
Product Specification
Table 4. Absolute Maximum Ratings
Parameter/Condition
Supply voltage
Digital input voltage (V1, V2)
RF input power, CW
(RFC–RFX)
1
9 kHz–27.5 MHz
≥
27.5 MHz–18 GHz
RF input power, pulsed
(RFC–RFX)
2
9 kHz–27.5 MHz
≥
27.5 MHz–18 GHz
RF input power into
terminated ports, CW (RFX)
1
9 kHz–18.8 MHz
≥
18.8 MHz–18 GHz
Storage temperature range
ESD voltage HBM,
3
all pins
ESD voltage MM
4
, all pins
ESD voltage CDM
5
, all pins
Notes:
Switching Frequency
Max
5.5
3.6
Unit
V
V
Symbol
V
DD
V
CTRL
Min
–0.3
–0.3
P
MAX,ABS
Fig. 4
33
dBm
dBm
The PE42543 has a maximum 25 kHz switching
rate when the internal negative voltage generator
is used (pin 29 = GND). Switching frequency
describes the time duration between switching
events. Switching time is the duration between
the point the control signal reaches 50% of the
final value and the point the output signal reaches
within 10% or 90% of its target value.
Optional External V
SS
Control (V
SS_EXT
)
For proper operation, the V
SS_EXT
control pin must
be grounded or tied to the V
SS
voltage specified in
Table 3.
When the V
SS_EXT
control pin is
grounded, FETs in the switch are biased with an
internal negative voltage generator. For
applications that require the lowest possible spur
performance, V
SS_EXT
can be applied externally to
bypass the internal negative voltage generator.
Spurious Performance
The typical spurious performance of the PE42543
is –150 dBm when V
SS_EXT
= 0V (pin 29 = GND). If
further improvement is desired, the internal
negative voltage generator can be disabled by
setting V
SS_EXT
= –3.4V.
Table 5. Truth Table
State
RF1 on
RF2 on
RF3 on
RF4 on
V1
0
1
0
1
V2
0
0
1
1
P
MAX,PULSED
Fig. 4
34
dBm
dBm
P
MAX,TERM
Fig. 4
22
–65
+150
2500
150
250
dBm
dBm
°C
V
V
V
T
ST
V
ESD,HBM
V
ESD,MM
V
ESD,CDM
1. 100% duty cycle, all bands, 50Ω
2.
Pulsed, 5% duty cycle of 4620 µs period, 50Ω
3. Human Body Model (MIL_STD 883 Method 3015)
4. Machine Model (JEDEC JESD22-A115)
5. Charged Device Model (JEDEC JESD22-C101)
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE42543 in the 29-lead 4
4
mm LGA package is
MSL3.
Hot-Switching Capability
The maximum hot switching capability of the
PE42543 is 20 dBm from 18.8 MHz to 18 GHz.
The maximum hot switching capability below
18.8 MHz does not exceed the maximum RF CW
terminated power, see
Figure 4.
Hot switching
occurs when RF power is applied while switching
between RF ports.
©2013-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 14
Document No. DOC-12314-2
│
UltraCMOS
®
RFIC Solutions
PE42543
Product Specification
Figure 4a. Power De-rating Curve for 9 kHz–18 GHz @ 25°C Ambient (50Ω)
35
30
25
Input Power (dBm)
20
15
10
P0.1 dB Compression @ 25°C Ambient
Max. RF Input Power, Pulsed (≥ 26.0 MHz, 25°C Ambient)
Max. RF Input Power, CW (≥ 26.0 MHz, 25°C Ambient)
5
0
Max. RF Input Power, CW & Pulsed (< 26.0 MHz, 25°C Ambient)
Max. RF Terminated Power, CW @ 25°C Ambient
‐5
Frequency (MHz)
Figure 4b. Power De-rating Curve for 9 kHz–18 GHz @ 85°C Ambient (50Ω)
35
30
25
Input Power (dBm)
20
15
10
P0.1 dB Compression @ 85°C Ambient
Max. RF Input Power, Pulsed (≥ 27.5 MHz, 85°C Ambient)
Max. RF Input Power, CW (≥ 27.5 MHz, 85°C Ambient)
Max. RF Input Power, CW & Pulsed (< 27.5 MHz, 85°C Ambient)
Max. RF Terminated Power, CW @ 85°C Ambient
5
0
‐5
Frequency (MHz)
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