Ordering number : EN3259A
2SB1230 / 2SD1840
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1230 / 2SD1840
Applications
•
High-Current Switching
Applications
Motor drivers, relay drivers, converters and other general high-current switching applications.
Features
•
•
Large current capacity and wide ASO.
Low saturation voltage.
Specifications
( ) : 2SB1230
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)110
(-
-)100
(-
-)6
(--)15
(--)25
(-
-)5
3.0
100
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Conditions
VCB=(--)100V, IE=0A
VEB=(--)5V, IC=0A
VCE=(--)2V, IC=(--)1.5A
VCE=(--)2V, IC=(--)6A
IC=(--)6A, IB=(--)0.6A
IC=(--)6A, IB=(--)0.6A
50*
20
(--)0.8
(--)1.5
V
V
Ratings
min
typ
max
(--)0.1
(--)0.1
140*
Unit
mA
mA
Continued on next page.
*
: For the hFE1 of the 2SB1230 / 2SD1840, specify two ranks or more in principle.
Rank
P
Q
hFE
50 to 100
70 to 140
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 12006DA MS IM TB-00002034 / D1003TN (KT) / 92098HA (KT) / 9140MH, JK (KOTO) No.3259-1/4
2SB1230 / 2SD1840
Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
IC=(--)1mA, IE=0A
IC=(--)5mA, RBE=∞
IE=(-
-)1mA, IC=0A
Ratings
min
(-
-)110
(--)100
(--)6
typ
max
Unit
V
V
V
Package Dimensions
unit : mm
7503-003
15.6
14.0
2.6
3.5
4.8
3.2
2.0
1.6
2.0
20.0
1.3
15.0
20.0
1.2
1.0
0.6
1
2 3
0.6
1.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
5.45
5.45
--18
--16
IC -- VCE
2SB1230
2.0A
1.0
A
18
16
IC -- VCE
2SD1840
2.0A
A
1.0
Collector Current, IC -- A
Collector Current, IC -- A
--14
--12
0.5A
0.3A
14
12
10
8
6
4
2
A
0.5
0.3A
0.2A
--10
--8
--6
--4
--2
0
0
--1
--2
--3
--4
0.2A
0.1A
0.05A
0.1A
0.05A
IB=0A
--5
ITR09378
0
0
1
2
3
4
IB=0A
5
Collector-to-Emitter Voltage, VCE -- V
--16
--14
IC -- VBE(ON)
Collector-to-Emitter Voltage, VCE -- V
ITR09379
16
14
IC -- VBE(ON)
2SB1230
VCE= --2V
2SD1840
VCE=2V
Collector Current, IC -- A
--12
--10
--8
--6
--4
--2
0
0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
ITR09380
Collector Current, IC -- A
12
10
8
6
120
°
C
25
°
C
12
25
°
C
0
°
C
0.8
4
2
0
0
0.4
°
C
--40
°
C
1.2
Ta=
--40
Ta
=
1.6
2.0
2.4
ITR09381
Base-to-Emitter ON Voltage, VBE(ON) -- V
Base-to-Emitter ON Voltage, VBE(ON) -- V
No.3259-2/4
2SB1230 / 2SD1840
3
2
hFE -- IC
Ta=120
°C
2SB1230
VCE= --2V
3
2
hFE -- IC
Ta=120
°C
2SD1840
VCE=2V
100
DC Current Gain, hFE
7
5
3
2
DC Current Gain, hFE
25
°C
100
7
5
3
2
25
°C
--40°C
--40°C
10
7
5
3
2
5 7 --0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
10
7
5
3
2
5
7 0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
Collector Current, IC -- A
2
ITR09382
2
VCE(sat) -- IC
Collector Current, IC -- A
ITR09383
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
--1.0
7
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SB1230
IC / IB=10
1.0
7
5
3
2
2SD1840
IC / IB=10
°
C
25
--0.1
7
5
3
2
5 7 --0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
12
Ta=
0
°
C
0.1
7
5
3
2
5 7 0.1
2
--40
°
C
°
C
120
Ta=
5
°
C
2
°
C
--40
3
5 7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC -- A
5
3
ITR09384
5
3
VCE(sat) -- IC
Collector Current, IC -- A
ITR09385
VCE(sat) -- IC
2SB1230
Ta=25
°
C
2SD1840
Ta=25
°
C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
--1.0
7
5
3
2
--0.1
7
5
3
2
7
--0.1
2
2
1.0
7
5
3
2
0.1
7
5
3
2
20
I C / I B=
0
I C / I B=2
0
I C / I B=1
7
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
=10
/ IB
IC
3
5
7 --1.0
2
3
5
7 --10
2
3
Collector Current, IC -- A
3
2
ITR09386
3
2
VBE(sat) -- IC
Collector Current, IC -- A
ITR09387
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB1230
IC / IB=10
2SD1840
IC / IB=10
--1.0
7
5
Ta= --40
°C
25
°
C
120
°
C
1.0
7
5
Ta= --40
°C
25
°C
120
°
C
3
2
3
2
--0.1
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
0.1
5
7 0.1
2
3
5
7 1.0
2
3
5
7
10
2
Collector Current, IC -- A
ITR09388
Collector Current, IC -- A
ITR09389
No.3259-3/4
2SB1230 / 2SD1840
5
3
2
ASO
ICP=25A
IC=15A
3.5
PC -- Ta
2SB1230 / 2SD1840
10
2
50
00
µ
1m
0
µ
s
s
s
10
m
s
0
µ
s
Collector Dissipation, PC -- W
3.0
Collector Current, IC -- A
10
2.5
DC
s
n
0m
10
ratio
e
5
3
2
1.0
5
3
2
0.1
5
5
2SB1230 / 2SD1840
Tc=25°C
Single Pulse
For PNP minus sign is omitted.
7 1.0
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE --
120
PC -- Tc
op
2.0
No
he
at
1.5
sin
k
1.0
0.5
0
7 100
2
V
ITR09392
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR09390
2SB1230 / 2SD1840
Collector Dissipation, PC -- W
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
ITR09391
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.
PS No.3259-4/4
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