MX29F800BTC-70G datasheet, PDF

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MX29F800BTC-70G: DescriptionFlash, 512KX16, 70ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48; Categorystorage storage; File Size442KB，42 Pages; ManufacturerMacronix; Websitehttp://www.macronix.com/en-us/Pages/default.aspx; Environmental Compliance

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MX29F800BTC-70G Overview

Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48

MX29F800BTC-70G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Macronix
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	70 ns
Spare memory width	8
startup block	BOTTOM
command user interface	YES
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	8388608 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	1,2,1,15
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	YES
type	NOR TYPE
width	12 mm

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MX29F800T/B

8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY

FEATURES

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

- 5.0V only operation for read, erase and program

operation

• Fast access time: 70/90/120ns

• Low power consumption

- 50mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte/word Programming (7us/12us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

• Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, another sector that is not being

erased, then resumes the erase.

• Status Reply

- Data polling & Toggle bit for detection of program and

•

erase operation completion.

Ready/Busy pin (RY/BY)

- Provides a hardware method of detecting program

or erase operation completion.

Sector protection

- Sector protect/chip unprotect for 5V/12V system.

- Hardware method to disable any combination of

sectors from program or erase operations

- Temporary sector unprotect allows code changes in

previously locked sectors.

100,000 minimum erase/program cycles

Latch-up protected to 100mA from -1V to VCC+1V

Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

Low VCC write inhibit is equal to or less than 3.2V

Package type:

- 44-pin SOP

- 48-pin TSOP

Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

•

GENERAL DESCRIPTION

The MX29F800T/B is a 8-mega bit Flash memory or-

ganized as 1M bytes of 8 bits or 512K words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29F800T/B is packaged in 44-pin SOP, 48-pin

TSOP. It is designed to be reprogrammed and erased

in system or in standard EPROM programmers.

The standard MX29F800T/B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29F800T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F800T/B uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29F800T/B uses a 5.0V±10% VCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM0578

REV. 2.5, NOV. 05, 2004

MX29F800BTC-70G Related Products

	MX29F800BTC-70G	MX29F800TTC-70G	MX29F800BTC-90G	MX29F800TTC-90G	MX29F800TTC-12G	MX29F800BTC-12G
Description	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Macronix	Macronix	Macronix	Macronix	Macronix	Macronix
Parts packaging code	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
package instruction	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20
Contacts	48	48	48	48	48	48
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	70 ns	70 ns	90 ns	90 ns	120 ns	120 ns
Spare memory width	8	8	8	8	8	8
startup block	BOTTOM	TOP	BOTTOM	TOP	TOP	BOTTOM
command user interface	YES	YES	YES	YES	YES	YES
Data polling	YES	YES	YES	YES	YES	YES
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48
length	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1
Number of departments/size	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15
Number of terminals	48	48	48	48	48	48
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
ready/busy	YES	YES	YES	YES	YES	YES
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Department size	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K
Maximum standby current	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
Maximum slew rate	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
switch bit	YES	YES	YES	YES	YES	YES
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm

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