2SB1556-C datasheet, PDF - EEWORLD Datasheet

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2SB1556-C: DescriptionTRANSISTOR 8 A, 140 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size176KB，3 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SB1556-C Overview

TRANSISTOR 8 A, 140 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power

2SB1556-C Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	140 V
Configuration	DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	15000
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	120 W
Maximum power dissipation(Abs)	120 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
VCEsat-Max	2.5 V
Base Number Matches	1

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2SB1556-C Related Products

	2SB1556-C	2SB1556-B	2SB1556-A
Description	TRANSISTOR 8 A, 140 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power	TRANSISTOR 8 A, 140 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power	TRANSISTOR 8 A, 140 V, PNP, Si, POWER TRANSISTOR, 2-21F1A, 3 PIN, BIP General Purpose Power
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	8 A	8 A	8 A
Collector-emitter maximum voltage	140 V	140 V	140 V
Configuration	DARLINGTON WITH BUILT-IN RESISTOR	DARLINGTON WITH BUILT-IN RESISTOR	DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	15000	9000	5000
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	PNP
Maximum power consumption environment	120 W	120 W	120 W
Maximum power dissipation(Abs)	120 W	120 W	120 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz
VCEsat-Max	2.5 V	2.5 V	2.5 V
Base Number Matches	1	1	1

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