AP9576GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
-60V
100mΩ
-14A
S
Description
AP9576 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance. The through-hole version (AP9576GJ) is
available for low-profile applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
o
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
.
Rating
-60
+20
-14
-9
-45
36.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
3.4
62.5
110
Units
℃/W
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1
201408272
AP9576GH/J-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
o
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-10A
V
GS
=-4.5V, I
D
=-8A
Min.
-60
-
-
-0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
6
-
-
14
3
6
8
18
32
56
120
90
Max. Units
-
100
120
-3
-
-25
+100
22
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5A
V
DS
=-48V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-10A
V
DS
=-48V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-10A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
1170 1880
.
f=1.0MHz
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-10A, V
GS
=0V
I
S
=-10A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
40
60
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9576GH/J-HF
30
30
T
C
= 25
o
C
-I
D
, Drain Current (A)
20
-I
D
, Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
V
G
= -3.0 V
T
C
= 150
o
C
20
-10V
-7.0V
-5.0V
-4.5V
V
G
= -3.0 V
10
10
0
0
2
4
6
8
10
12
0
0
2
4
6
8
10
12
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
I
D
=-8A
T
C
=25
o
C
Normalized R
DS(ON)
95
1.6
I
D
= - 10 A
V
G
= - 10V
R
DS(ON)
(m
Ω
)
90
1.2
.
85
0.8
80
2
4
6
8
10
0.4
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
4
3
1.5
2
Normalized V
GS(th)
1.2
-I
S
(A)
1.0
T
j
=150
o
C
T
j
=25
o
C
1
0.5
0
0.0
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9576GH/J-HF
10
10000
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
I
D
= -10A
V
DS
= -48V
8
1000
C
iss
4
100
C (pF)
6
C
oss
C
rss
2
0
0
5
10
15
20
25
30
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.0
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
100us
10.0
0.2
-I
D
(A)
1ms
10ms
1.0
0.1
.
0.1
0.05
P
DM
100ms
DC
T
c
=25 C
Single Pulse
o
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9576GH/J-HF
MARKING INFORMATION
TO-251
9576GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
9576GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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