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BP103-4

Description
PHOTO TRANSISTOR DETECTOR
CategoryLED optoelectronic/LED    photoelectric   
File Size268KB,11 Pages
ManufacturerOsram Opto Semiconductor
Websitehttps://www.osram.com/index-2.jsp
Environmental Compliance
Download Datasheet Parametric Compare View All

BP103-4 Overview

PHOTO TRANSISTOR DETECTOR

BP103-4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerOsram Opto Semiconductor
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Coll-Emtr Bkdn Voltage-Min50 V
ConfigurationSINGLE
Maximum dark power100 nA
Infrared rangeYES
JESD-609 codee3
Nominal photocurrent0.95 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum on-state current0.1 A
Maximum operating temperature80 °C
Minimum operating temperature-40 °C
Optoelectronic device typesPHOTO TRANSISTOR
peak wavelength850 nm
Maximum power dissipation0.3 W
Maximum response time0.000009 s
shapeROUND
size4.2 mm
surface mountNO
Terminal surfaceTin (Sn) - with Nickel (Ni) barrier
2014-01-14
Silicon NPN Phototransistor
NPN-Silizium-Fototransistor
Version 1.1
BP 103
Spectral range of sensitivity:
(typ) 450 ... 1100
nm
Package:
Metal Can (TO-18), hermetically sealed,
Epoxy
Special:
Base connection
• High linearity
Features:
Spektraler Bereich der Fotoempfindlichkeit:
(typ) 450 ... 1100 nm
Gehäuse:
Metall Gehäuse (TO-18), hermetisch
dicht, Harz
Besonderheit:
Basisanschluss
• Hohe Linearität
Besondere Merkmale:
Applications
Photointerrupters
Industrial electronics
For control and drive circuits
Computer-controlled flashes
Anwendungen
Lichtschranken
Industrieelektronik
Messen / Steuern / Regeln
Computer-Blitzlichtgeräte
Ordering Information
Bestellinformation
Type:
Typ:
Photocurrent
Fotostrom
λ
= 950 nm, E
e
= 0.5 mW/cm , V
CE
= 5 V
I
PCE
[µA]
BP 103
BP 103-3/4
Note:
Anm.:
2
Ordering Code
Bestellnummer
> 80
125 ... 400
Q62702P0075
Q62702P3577
Only one bin within one packing unit (variation less than 2:1)
Nur eine Gruppe pro Verpackungseinheit (Streuung kleiner 2:1)
2014-01-14
1

BP103-4 Related Products

BP103-4 BP103-3
Description PHOTO TRANSISTOR DETECTOR PHOTO TRANSISTOR DETECTOR
Is it Rohs certified? conform to conform to
Maker Osram Opto Semiconductor Osram Opto Semiconductor
Reach Compliance Code compliant compliant
Other features HIGH RELIABILITY HIGH RELIABILITY
Coll-Emtr Bkdn Voltage-Min 50 V 50 V
Configuration SINGLE SINGLE
Maximum dark power 100 nA 100 nA
Infrared range YES YES
JESD-609 code e3 e3
Nominal photocurrent 0.95 mA 0.6 mA
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Number of functions 1 1
Maximum on-state current 0.1 A 0.1 A
Maximum operating temperature 80 °C 80 °C
Minimum operating temperature -40 °C -40 °C
Optoelectronic device types PHOTO TRANSISTOR PHOTO TRANSISTOR
peak wavelength 850 nm 850 nm
Maximum power dissipation 0.3 W 0.3 W
Maximum response time 0.000009 s 0.000007 s
shape ROUND ROUND
size 4.2 mm 4.2 mm
surface mount NO NO
Terminal surface Tin (Sn) - with Nickel (Ni) barrier Tin (Sn) - with Nickel (Ni) barrier

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