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2SA1190DRF

Description
Small Signal Bipolar Transistor, 0.1A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92(1), 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size260KB,8 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SA1190DRF Overview

Small Signal Bipolar Transistor, 0.1A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92(1), 3 PIN

2SA1190DRF Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage90 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
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