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HEDFS103GTR

Description
Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size278KB,4 Pages
ManufacturerFagor Electrónica
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HEDFS103GTR Overview

Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN

HEDFS103GTR Parametric

Parameter NameAttribute value
MakerFagor Electrónica
package instructionROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage200 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage200 V
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
HEDFS103G ....... HEDFS107G
1.0 Amp. Miniature Glass Passivated Ultrafast Surface Mount Bridge Rectifier
Voltage
200 V to 1000 V
Current
1.0 A
DFS
FEATURES
• Ultrafast reverse recovery time for high frequency
• Ideal for automated placement
• High forward surge current capability
• Solder dip 260ºC, 10s
• Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 250º C
MECHANICAL DATA
• Case
:
DFS
Epoxy meets UL 94V-0 flammability rating.
• Polarity
:
As marked on body.
• Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.
TYPICAL APPLICATIONS
Used in ac-to-dc bridge full wave rectification for SMPS,
lighting ballaster, adapter, battery charger, home appliances, office
equipment, and telecommunication applications..
Maximun Ratings and Electrical Characteristics at 25°C
Marking Code
HEDFS
HEDFS
HEDFS
HEDFS
HEDFS
103G
104G
105G
106G
107G
DFS103G DFS104G DFS105G DFS106G DFS107G
200
140
200
400
280
400
600
420
600
1.0 A
50 A
50 nS
25 pF
15 °C/W
40 °C/W
-55 to + 150 °C
-55 to + 150 °C
75 nS
800
560
800
1000
700
1000
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
rr
C
j
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
@T
A
= 40 °C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method)
Max. reverse recovery time from
I
F
= 0.5 A ; I
R
= 1 A ; I
RR
= 0.25 A
Typical Junction Capacitance
R
th (j-l)
Typical Thermal Resistance (Note 2)
R
th (j-a)
T
j
Operating Temperature Range
T
stg
Storage Temperature Range
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
Max. Instantaneous Forward Voltage @ 1.0A
Maximum DC Reverse Current @ T
A
= 25 °C
at Rated DC Blocking Voltage @ T
A
= 125 °C
1.0 V
1.3 V
5.0 µA
500 µA
1.7 V
Note: 1. DBS for Surface Mount Package.
2. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted
On P.C.B. with 5 x 5mm Copper Pads.
www.fagorelectronica.com
Document Name: hedfs
Version: Dec-11
Page Number: 1/4

HEDFS103GTR Related Products

HEDFS103GTR HEDFS106GTR HEDFS105GTR HEDFS104GTR HEDFS107GTR
Description Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN
package instruction ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN R-PDSO-G4 R-PDSO-G4 ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN ROHS COMPLIANT, MINIATURE, PLASTIC, DFS, 4 PIN
Contacts 4 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 200 V 800 V 600 V 400 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3 e3 e3 e3
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4
Phase 1 1 1 1 1
Number of terminals 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 200 V 800 V 600 V 400 V 1000 V
surface mount YES YES YES YES YES
Terminal surface MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maker Fagor Electrónica - Fagor Electrónica Fagor Electrónica Fagor Electrónica
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