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RL256

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size76KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance  
Download Datasheet Parametric Compare View All

RL256 Overview

Rectifier Diode,

RL256 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current2.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineTS 16949
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Certificate TH97/10561QM
Certificate TW00/17276EM
RL251 - RL257
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON RECTIFIER DIODES
D2A
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 2.5 A
Maximum DC Reverse Current
at rated DC Blocking Voltage
Typical Thermal Resistance
Operation Junction and Storage Temperature Range
Ta = 25 °C
Ta = 100 °C
V
F
I
R
I
R(H)
C
J
R
ӨJA
T
J
, T
STG
1.1
5
50
35
35
- 65 to + 175
V
μA
μA
pF
°C/W
°C
I
FSM
150
A
SYMBOL
RL251 RL252 RL253 RL254 RL255 RL256 RL257
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
2.5
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Typical Junction Capacitance (Note 1)
Note :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 00 : June 20, 2007

RL256 Related Products

RL256 RL251 RL257 RL252 RL253 RL254 RL255
Description Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode,
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A 2.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Guideline TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
Maximum repetitive peak reverse voltage 800 V 50 V 1000 V 100 V 200 V 400 V 600 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker EIC [EIC discrete Semiconductors] - - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
package instruction - O-PALF-W2 O-PALF-W2 O-PALF-W2 - - O-PALF-W2

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