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MT8JTF25664AY-80BXX

Description
DDR DRAM Module, 256MX64, CMOS, LEAD FREE, UDIMM-240
Categorystorage    storage   
File Size398KB,11 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT8JTF25664AY-80BXX Overview

DDR DRAM Module, 256MX64, CMOS, LEAD FREE, UDIMM-240

MT8JTF25664AY-80BXX Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeDIMM
package instructionDIMM,
Contacts240
Reach Compliance Codecompliant
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Other featuresSELF CONTAINED REFRESH
JESD-30 codeR-XDMA-N240
JESD-609 codee4
memory density17179869184 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals240
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)1.575 V
Minimum supply voltage (Vsup)1.425 V
Nominal supply voltage (Vsup)1.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
1GB, 2GB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
Features
DDR3 SDRAM UDIMM
MT8JTF12864A – 1GB
MT8JTF25664A – 2GB
For component data sheets, refer to Micron’s Web site:
www.micron.com
Features
• DDR3 functionality and operations supported as
defined in the component data sheet
• 240-pin, unbuffered dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC3-10600, PC3-8500,
or PC3-6400
• 1GB (128 Meg x 64), 2GB (256 Meg x 64)
• V
DD
= V
DD
Q = +1.5V ±0.075V
• V
DDSPD
= +3.0V to +3.6V
• Reset pin for improved system stability
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Single rank
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Adjustable data-output drive strength
• Serial presence-detect (SPD) EEPROM
• Gold edge contacts
• Lead-free
• Fly-by topology
• Terminated control, command, and address bus
Figure 1:
240-Pin UDIMM (MO-269 R/C A)
PCB height: 30mm (1.18in)
Options
Operating temperature
1
Marking
Commercial (0°C
T
A
+70°C)
None
Industrial (–40°C
T
A
+85°C)
I
• Package
240-pin DIMM (lead-free)
Y
• Frequency/CAS latency
1.5ns @ CL = 9 (DDR3-1333)
-1G4
2
1.5ns @ CL = 10 (DDR3-1333)
-1G3
1.87ns @ CL = 7 (DDR3-1066)
-1G1
2
1.87ns @ CL = 8 (DDR3-1066)
-1G0
2
2.5ns @ CL = 5 (DDR3-800)
-80C
2
2.5ns @ CL = 6 (DDR3-800)
-80B
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. Not recommended for new designs.
Table 1:
Speed
Grade
-1G4
-1G3
-1G1
-1G0
-80C
-80B
Key Timing Parameters
Data Rate (MT/s)
Industry
Nomenclature
PC3-10600
PC3-10600
PC3-8500
PC3-8500
PC3-6400
PC3-6400
CL = 10 CL = 9
1333
1333
1333
CL = 8
1066
1066
1066
1066
CL = 7
1066
1066
CL = 6
800
800
800
800
800
800
CL = 5
800
t
RCD
(ns)
13.5
15
RP
(ns)
13.5
15
13.125
15
12.5
15
t
RC
(ns)
49.5
51
50.625
52.5
50
52.5
t
13.125
15
12.5
15
PDF: 09005aef82b21119/Source: 09005aef82b2112c
JTF8c128_256x64AY.fm - Rev. B 6/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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Description DDR DRAM Module, 256MX64, CMOS, LEAD FREE, UDIMM-240 DDR DRAM Module, 256MX64, CMOS, LEAD FREE, UDIMM-240 MODULE DDR3 SDRAM 1GB 240UDIMM DDR DRAM Module, 128MX64, CMOS, LEAD FREE, UDIMM-240 DDR DRAM Module, 128MX64, CMOS, LEAD FREE, UDIMM-240 DDR DRAM Module, 128MX64, CMOS, LEAD FREE, UDIMM-240 DDR DRAM Module, 256MX64, CMOS, LEAD FREE, UDIMM-240 DDR DRAM Module, 256MX64, CMOS, LEAD FREE, UDIMM-240 DDR DRAM Module, 256MX64, CMOS, LEAD FREE, UDIMM-240
Is it lead-free? Lead free Lead free - Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to - conform to conform to conform to conform to conform to conform to
Maker Micron Technology Micron Technology - - Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code DIMM DIMM - DIMM DIMM DIMM DIMM DIMM DIMM
package instruction DIMM, LEAD FREE, UDIMM-240 - DIMM, LEAD FREE, UDIMM-240 DIMM, LEAD FREE, UDIMM-240 DIMM, LEAD FREE, UDIMM-240
Contacts 240 240 - 240 240 240 240 240 240
Reach Compliance Code compliant compliant - compliant compliant compliant compliant compliant compli
ECCN code EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST - SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Other features SELF CONTAINED REFRESH SELF CONTAINED REFRESH - SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH
JESD-30 code R-XDMA-N240 R-XDMA-N240 - R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240 R-XDMA-N240
JESD-609 code e4 e4 - e4 e4 e4 e4 e4 e4
memory density 17179869184 bit 17179869184 bit - 8589934592 bit 8589934592 bit 8589934592 bit 17179869184 bit 17179869184 bit 17179869184 bi
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE - DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE
memory width 64 64 - 64 64 64 64 64 64
Number of functions 1 1 - 1 1 1 1 1 1
Number of ports 1 1 - 1 1 1 1 1 1
Number of terminals 240 240 - 240 240 240 240 240 240
word count 268435456 words 268435456 words - 134217728 words 134217728 words 134217728 words 268435456 words 268435456 words 268435456 words
character code 256000000 256000000 - 128000000 128000000 128000000 256000000 256000000 256000000
Operating mode SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C - 70 °C 70 °C 85 °C 70 °C 85 °C 70 °C
organize 256MX64 256MX64 - 128MX64 128MX64 128MX64 256MX64 256MX64 256MX64
Package body material UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM - DIMM DIMM DIMM DIMM DIMM DIMM
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) 260 260 - 260 260 260 260 260 260
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
self refresh YES YES - YES YES YES YES YES YES
Maximum supply voltage (Vsup) 1.575 V 1.575 V - 1.575 V 1.575 V 1.575 V 1.575 V 1.575 V 1.575 V
Minimum supply voltage (Vsup) 1.425 V 1.425 V - 1.425 V 1.425 V 1.425 V 1.425 V 1.425 V 1.425 V
Nominal supply voltage (Vsup) 1.5 V 1.5 V - 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
surface mount NO NO - NO NO NO NO NO NO
technology CMOS CMOS - CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL - COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL
Terminal surface Gold (Au) Gold (Au) - Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au) Gold (Au)
Terminal form NO LEAD NO LEAD - NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL - DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 - 30 30 30 30 30 30
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