MJE225LEADFREE datasheet, PDF - EEWORLD Datasheet

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MJE225LEADFREE: DescriptionPower Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,; CategoryDiscrete semiconductor The transistor; File Size340KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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MJE225LEADFREE Overview

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

MJE225LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-based maximum capacity	50 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz
VCEsat-Max	2.5 V

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MJE220 THRU MJE225

w w w. c e n t r a l s e m i . c o m

NPN SILICON

POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MJE220 series

types are NPN silicon power transistors, manufactured

by the epitaxial-base process, designed for general

purpose amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-126 CASE

MJE220

MJE221

MJE222

MJE223

MJE224

MJE225

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCEO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

Cob

SYMBOL

VCBO

VCEO

VEBO

ICM

TJ, Tstg

7.0

4.0

8.0

1.0

1.5

-65 to +150

83.4

8.34

UNITS

°C

°C/W

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=Rated VCBO

VCB=Rated VCBO, TC=125°C

VEB=7.0V

IC=10mA (MJE220, MJE221, MJE222)

IC=10mA (MJE223, MJE224, MJE225)

IC=500mA, IB=50mA

IC=1.0A, IB=100mA (MJE221, MJE224)

IC=2.0A, IB=200mA (MJE220, MJE223)

IC=4.0A, IB=1.0A

IC=2.0A, IB=200mA

VCE=1.0V, IC=500mA

VCE=1.0V, IC=200mA (MJE220, MJE223)

VCE=1.0V, IC=200mA (MJE221, MJE224)

VCE=1.0V, IC=200mA (MJE222, MJE225)

VCE=1.0V, IC=1.0A (MJE221, MJE224)

VCE=1.0V, IC=1.0A (MJE222, MJE225)

VCE=1.0V, IC=2.0A (MJE220, MJE223)

VCE=10V, IC=100mA, f=10MHz

VCE=10V, IE=0, f=100kHz

TYP

MAX

100

0.3

0.6

0.8

2.5

1.8

1.5

200

150

UNITS

μA

MHz

R2 (26-November 2012)

MJE225LEADFREE Related Products

	MJE225LEADFREE	MJE220LEADFREE	MJE221LEADFREE	MJE222LEADFREE	MJE223LEADFREE	MJE224LEADFREE
Description	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A	4 A	4 A	4 A	4 A
Collector-based maximum capacity	50 pF	50 pF	50 pF	50 pF	50 pF	50 pF
Collector-emitter maximum voltage	60 V	40 V	40 V	40 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	20	20	10	20	20
JEDEC-95 code	TO-126	TO-126	TO-126	TO-126	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W
Maximum power dissipation(Abs)	15 W	15 W	15 W	15 W	15 W	15 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz
VCEsat-Max	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V

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