MD3250 MD3250A
MD3251 MD3251A
DUAL PNP
SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MD3250
and MD3251 Series types are dual PNP silicon
transistors, manufactured by the epitaxial planar
process utilizing two individual chips mounted in
a hermetically sealed metal case, designed for
differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Die)
Power Dissipation (One Die), TC=25°C
Power Dissipation (Both Die), TC=25°C
Operating and Storage Junction Temperature
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
PD
PD
TJ, Tstg
40
50
5.0
50
575
625
1.8
2.5
-65 to +200
UNITS
V
V
V
mA
mW
mW
W
W
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=40V
ICBO
IEBO
BVCEO
BVCBO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
VCB=40V, TA=150°C
VBE=3.0V
IC=10mA
IC=10μA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
40
50
5.0
MAX
10
10
10
UNITS
nA
μA
nA
V
V
V
0.25
0.50
0.60
25
50
50
80
50
100
50
100
150
300
150
300
0.90
1.2
V
V
V
V
VCE=5.0V, IC=10μA (MD3250,A)
VCE=5.0V, IC=10μA (MD3251,A)
VCE=5.0V,
VCE=5.0V,
IC=100μA (MD3250,A)
IC=100μA (MD3251,A)
VCE=5.0V, IC=1.0mA (MD3250,A)
VCE=5.0V, IC=1.0mA (MD3251,A)
VCE=5.0V,
VCE=5.0V,
IC=10mA (MD3250,A)
IC=10mA (MD3251,A)
R0 (9-June 2009)
Central
TM
MD3250 MD3250A
MD3251 MD3251A
DUAL PNP
SILICON TRANSISTOR
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
hFE
VCE=5.0V, IC=50mA (MD3250,A)
15
hFE
fT
fT
Cob
Cib
VCE=5.0V, IC=50mA (MD3251,A)
VCE=20V, IC=10mA, f=100MHz (MD3250,A)
VCE=20V, IC=10mA, f=100MHz (MD3251,A)
VCB=5.0V, IE=0, f=100kHz
VBE=1.0V, IC=0, f=100kHz
MIN
0.90
0.90
30
200
250
6.0
8.0
MAX
1.0
1.0
5.0
3.0
5.0
UNITS
MHz
MHz
pF
pF
UNITS
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
hFE1/hFE2 (Note 1)
VCE=5.0V, IC=100μA
hFE1/hFE2 (Note 1)
I
VBE1-VBE2
I
I
VBE1-VBE2
I
I
VBE1-VBE2
I
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=100μA
VCE=5.0V, IC=10mA
mV
mV
mV
1) The lowest hFE reading is taken as hFE1.
TO-78 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R0 (9-June 2009)