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MS18R1628EH0-CM8

Description
Rambus DRAM Module, 128MX18, CMOS, SORIMM-160
Categorystorage    storage   
File Size238KB,14 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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MS18R1628EH0-CM8 Overview

Rambus DRAM Module, 128MX18, CMOS, SORIMM-160

MS18R1628EH0-CM8 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeDMA
package instructionDIMM, DIMM160,25
Contacts160
Reach Compliance Codecompliant
ECCN codeEAR99
access modeBLOCK ORIENTED PROTOCOL
Other featuresSELF CONTAINED REFRESH
Maximum clock frequency (fCLK)800 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N160
memory density2415919104 bit
Memory IC TypeRAMBUS DRAM MODULE
memory width18
Number of functions1
Number of ports1
Number of terminals160
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
organize128MX18
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM160,25
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8/2.5,2.5 V
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.63 V
Minimum supply voltage (Vsup)2.37 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Terminal formNO LEAD
Terminal pitch0.635 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
MS18R1622(4/8)EH0
Revision History
Version 0.1 (February 2004) -
Preliminary
- First Copy
- Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM
Module Datasheet.
Version 1.0 (May 2004)
- Eliminate "Preliminary"
Page 0
Rev. 1.0 May 2004

MS18R1628EH0-CM8 Related Products

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Description Rambus DRAM Module, 128MX18, CMOS, SORIMM-160 Rambus DRAM Module, 128MX18, CMOS, SORIMM-160 Rambus DRAM Module, 128MX18, CMOS, SORIMM-160 Rambus DRAM Module, 64MX18, 45ns, CMOS, SORIMM-160 Rambus DRAM Module, 64MX18, 40ns, CMOS, SORIMM-160 Rambus DRAM Module, 64MX18, 32ns, CMOS, SORIMM-160 Rambus DRAM Module, 32MX18, 32ns, CMOS, SORIMM-160 Rambus DRAM Module, 32MX18, 40ns, CMOS, SORIMM-160 Rambus DRAM Module, 32MX18, 45ns, CMOS, SORIMM-160
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code DMA DMA DMA DMA DMA DMA DMA DMA DMA
package instruction DIMM, DIMM160,25 DIMM, DIMM160,25 DIMM, DIMM160,25 DIMM, DIMM160,25 DIMM, DIMM160,25 DIMM, DIMM160,25 DIMM, DIMM160,25 DIMM, DIMM160,25 DIMM, DIMM160,25
Contacts 160 160 160 160 160 160 160 160 160
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL BLOCK ORIENTED PROTOCOL
Other features SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH SELF CONTAINED REFRESH
Maximum clock frequency (fCLK) 800 MHz 800 MHz 1066 MHz 800 MHz 800 MHz 1066 MHz 1066 MHz 800 MHz 800 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-XDMA-N160 R-XDMA-N160 R-XDMA-N160 R-XDMA-N160 R-XDMA-N160 R-XDMA-N160 R-XDMA-N160 R-XDMA-N160 R-XDMA-N160
memory density 2415919104 bit 2415919104 bit 2415919104 bit 1207959552 bit 1207959552 bit 1207959552 bit 603979776 bit 603979776 bit 603979776 bit
Memory IC Type RAMBUS DRAM MODULE RAMBUS DRAM MODULE RAMBUS DRAM MODULE RAMBUS DRAM MODULE RAMBUS DRAM MODULE RAMBUS DRAM MODULE RAMBUS DRAM MODULE RAMBUS DRAM MODULE RAMBUS DRAM MODULE
memory width 18 18 18 18 18 18 18 18 18
Number of functions 1 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1 1
Number of terminals 160 160 160 160 160 160 160 160 160
word count 134217728 words 134217728 words 134217728 words 67108864 words 67108864 words 67108864 words 33554432 words 33554432 words 33554432 words
character code 128000000 128000000 128000000 64000000 64000000 64000000 32000000 32000000 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize 128MX18 128MX18 128MX18 64MX18 64MX18 64MX18 32MX18 32MX18 32MX18
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM160,25 DIMM160,25 DIMM160,25 DIMM160,25 DIMM160,25 DIMM160,25 DIMM160,25 DIMM160,25 DIMM160,25
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V 1.8/2.5,2.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
self refresh YES YES YES YES YES YES YES YES YES
Maximum supply voltage (Vsup) 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V 2.63 V
Minimum supply voltage (Vsup) 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V 2.37 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
surface mount NO NO NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum access time - - - 45 ns 40 ns 32 ns 32 ns 40 ns 45 ns

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