INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA743
DESCRIPTION
·Good
Linearity of h
FE
·High
Collector-Emitter Breakdown Voltage-
V
(BR)CEO
= -50V (Min)
·Complement
to Type 2SC1212
APPLICATIONS
·Designed
for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-50
V
V
CEO
Collector-Emitter Voltage
-50
V
V
EBO
Emitter-Base Voltage
-4
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
-1
A
0.75
W
P
C
Total Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
8
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA743
MAX
UNIT
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -1mA; I
E
= 0
-50
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -10mA; R
BE
=
∞
-50
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= -1mA; I
C
= 0
-4
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= -1A; I
B
= -0.1A
B
-1.5
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= -50mA ; V
CE
= -4V
-1.0
V
I
CER
Collector Cutoff Current
V
CE
= -50V; R
BE
= 1kΩ
-20
μA
h
FE-1
DC Current Gain
I
C
= -50mA ; V
CE
= -4V
60
200
h
FE-2
DC Current Gain
I
C
= -1A ; V
CE
= -4V
20
f
T
Current-Gain—Bandwidth Product
I
C
= -30mA ; V
CE
= -4V
120
MHz
h
FE-1
Classifications
B
60-120
C
100-200
isc Website：www.iscsemi.cn
2
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