BSH105
New Product
Vishay Semiconductor
V
DS
20V
R
DS(ON)
0.2Ω
I
D
1.14A
N-Channel Enhancement-Mode MOSFET
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
CH
EN ET
T
REN
F
®
0.031 (0.8)
G
0.035 (0.9)
0.079 (2.0)
Pin Configuration
1.
Gate
2.
Source
3.
Drain
1
2
max. .004 (0.1)
0.037 (0.95)
0.037 (0.95)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
Mounting Pad Layout
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
B05
Features
•
•
•
•
•
•
•
Advanced trench process technology
High density cell design for ultra-low on-resistance
Popular SOT-23 package
Compact and low profile
Low threshold voltage
Logic level
Fast switching
(T
A
= 25°C unless otherwise noted)
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Gate-Source-Voltage
Continuous Drain Current
(2)
T
J
= 150°C
Pulsed Drain Current
(1)
Power Dissipation
(2)
T
J
= 150°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
θJA
Limit
20
±
8
Unit
V
1.14
0.91
4.2
417
267
–55 to +150
300
A
mW
°C
°C/W
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance
(2)
Notes:
(1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in
2
2 oz. Cu PCB (FR-4 material)
Document Number 74502
10-Dec-01
www.vishay.com
1
BSH105
Vishay Semiconductor
Electrical Characteristics
(T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
BV
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 10µA
V
DS
= V
GS
, I
D
= 1mA
V
DS
= 0V, V
GS
=
±
8V
V
DS
= 16V, V
GS
= 0V
V
DS
=16V, V
GS
=0V, T
J
=125°C
V
GS
= 4.5V, I
D
= 0.6A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 2.5V, I
D
= 0.6A
V
GS
= 1.8V, I
D
= 0.3A
Forward Transconductance
(1)
Dynamic
Total Gate Charge
(1)
Gate-Source Charge
(1)
Gate-Drain Charge
(1)
Turn-On Delay Time
(1)
Rise Time
(1)
Turn-Off Delay Time
(1)
Fall
Time
(1)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
GS
= 0V
V
DS
= 16V
f = 1.0MH
Z
V
DD
= 20V, R
L
= 20Ω
I
D
≈
1A, V
GEN
= 8V
R
G
= 6Ω
V
DS
= 20V, V
GS
= 4.5V
I
D
= 1.0A
–
–
–
–
–
–
–
–
–
–
3.45
0.44
1.15
4.8
8.0
80
70
218
43
28
8
–
–
10
18
90
80
–
–
–
pF
ns
nC
g
fs
V
DS
= 16V, I
D
= 0.6A
20
0.4
–
–
–
–
–
–
–
–
–
–
–
–
108
139
188
3.0
–
—
V
V
nA
µA
J
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
±
100
1
15
200
250
300
–
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Maximum Diode Forward Current
Maximum Pulsed Diode Forward Current
(2)
Diode Forward Voltage
(1)
I
S
I
SM
V
SD
T
A
= 25°C
—
I
F
= 0.5A, V
GS
= 0V
—
—
–
—
—
0.7
1.05
4.2
1
A
A
V
Note:
(1) Pulse test; pulse width
≤
300µs, duty cycle
≤
2%
(2) Pulse width limited by maximum junction temperature
V
DD
Switching
Test Circuit
V
IN
D
R
D
V
OUT
Switching
Waveforms
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
t
f
90 %
V
GEN
R
G
G
DUT
Output, V
OUT
10%
10%
INVERTED
90%
50%
50%
S
Input, V
IN
10%
PULSE WIDTH
www.vishay.com
2
Document Number 74502
10-Dec-01
BSH105
Vishay Semiconductor
Ratings and
Characteristic Curves
(T
5
V
GS
= 3.0V, 4.0V, 4.5V, 5.0V
A
= 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
5
Fig. 2 – Transfer Characteristics
V
DS
= 10V
--55°C
I
D
-- Drain-to-Source Current (A)
4
2.5V
2.1V
4
I
D
-- Drain Current (A)
T
J
= 125°C
3
3
1.8V
2
1.5V
1
2
1
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V
DS
-- Drain-to-Source Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
V
GS(th)
-- Gate-to-Source Threshold Voltage (V)
(Normalized)
Fig. 3 – Threshold Voltage
vs. Temperature
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
I
D
= 1mA
0.8
Fig. 4 – On-Resistance
vs. Drain Current
R
DS(ON)
-- On-Resistance (Ω)
0.6
0.4
V
GS
= 1.8V
0.2
V
GS
= 2.5V
V
GS
= 4.5V
0.5
--50
0
--25
0
25
50
75
100
125
150
0
1
2
3
4
5
T
J
-- Junction Temperature (°C)
I
D
-- Drain Current (A)
Fig. 5 – On-Resistance
vs. Junction Temperature
1.6
V
GS
= 4.5V
I
D
= 0.6A
0.6
Fig. 6 – On-Resistance
vs. Gate-to-Source Voltage
I
D
= 0.6A
0.5
0.4
R
DS(ON)
-- On-Resistance
(Normalized)
1.4
1.2
R
DS(ON)
-- On-Resistance (Ω)
0.3
1
0.2
T
J
= 125°C
0.1
T
J
= 25°C
0.8
0.6
--50
0
--25
0
25
50
75
100
125
150
0
2
4
6
8
10
T
J
-- Junction Temperature (°C)
V
GS
-- Gate-to-Source Voltage (V)
Document Number 74502
10-Dec-01
www.vishay.com
3
BSH105
Vishay Semiconductor
Ratings and
Characteristic Curves
(T
10
A
= 25°C unless otherwise noted)
Fig. 7 – Gate Charge
400
V
DS
= 20V
I
D
= 1.0A
8
Fig. 8 – Capacitance
f = 1MH
Z
V
GS
= 0V
V
GS
-- Gate-to-Source Voltage (V)
C -- Capacitance (pF)
300
C
iss
200
6
4
100
C
oss
C
rss
0
2
0
0
1
2
3
4
5
6
7
0
5
10
15
20
Q
g
-- Total Gate Charge (nC)
V
DS
-- Drain-to-Source Voltage (V)
Fig. 9 – Source-Drain Diode
Forward Voltage
10
V
GS
= 0V
1
Fig. 10 – Thermal Transient Impedance
Junction-to-Ambient
D = 0.5
R
θJA
(norm)
-- Normalized Thermal
Impedance
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
t
1
t
2
1. Duty Cycle, D = t
1
/t
2
2. R
θJA
(t) = R
θJA(norm)
*R
θJA
3. R
θJA
= 300°C/W
4. T
J
- T
A
= P
DM
* R
θJA
(t)
0.01
0.1
1
10
100
P
DM
I
S
-- Source Current (A)
1
T
J
= 125°C
25°C
0.1
--55°C
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.001
0.0001
0.001
V
SD
-- Source-to-Drain Voltage (V)
Pulse Duration (sec.)
Fig. 11 – Power vs. Pulse Duration
50
Single Pulse
R
θJA
= 300°C/W
T
A
= 25°C
10
Fig. 12 – Maximum Safe Operating Area
10
0
µ
s
1m
s
40
I
D
-- Drain Current (A)
1
ON
S(
R
D
it
Lim
)
10
m
10
0m
1s
s
DC
Power (W)
30
s
20
0.1
V
GS
= 4.5V
Single Pulse
R
θJA
= 300°C/W
T
A
= 25°C
0.1
1
10
100
10
0
0.0001
0.01
0.001
0.01
0.1
1
10
100
Pulse Duration (sec.)
V
DS
-- Drain-Source Voltage (V)
www.vishay.com
4
Document Number 74502
10-Dec-01
京公网安备 11010802033920号
EEWORLD
