BD135/137/139
BD135/137/139
Medium Power Linear and Switching
Applications
• Complement to BD136, BD138 and BD140 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: BD135
: BD137
: BD139
: BD135
: BD137
: BD139
Value
45
60
80
45
60
80
5
1.5
3.0
0.5
12.5
1.25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD135
: BD137
: BD139
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: ALL DEVICE
: ALL DEVICE
: BD135
: BD137, BD139
Test Condition
I
C
= 30mA, I
B
= 0
Min.
45
60
80
0.1
10
25
25
40
40
Typ.
Max.
Units
V
V
V
µA
µA
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
V
CB
= 30V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 5mA
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 150mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 2V, I
C
= 0.5A
250
160
0.5
1
V
V
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
h
FE
Classification
Classification
h
FE3
©2000 Fairchild Semiconductor International
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
Rev. A, February 2000
BD135/137/139
Typical Characteristics
100
90
80
V
CE
(sat)[mV], SATURATION VOLTAGE
V
CE
= 2V
500
450
400
350
300
250
200
150
100
50
0
1E-3
h
FE
, DC CURRENT GAIN
70
60
50
40
30
20
10
0
10
100
1000
I
C
= 20 I
B
0.01
0.1
1
I
C
= 10
I
B
10
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
1.1
10
V
BE
[V], BASE-EMITTER VOLTAGE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1E-3
0.01
0.01
0.1
1
10
1
I
C
[A], COLLECTOR CURRENT
t)
(sa
V
BE
0 I
B
1
I
C
=
)
(on
V
V
BE
=5
V
CE
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
s
1m
1
10us
100us
DC
0.1
BD139
BD137
BD135
10
100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
17.5
P
C
[W], POWER DISSIPATION
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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©2000 Fairchild Semiconductor International
Rev. E
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