BSS100E6288 datasheet, PDF - EEWORLD Datasheet

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BSS100E6288: DescriptionSmall Signal Field-Effect Transistor, 0.22A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size89KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSS100E6288 Overview

Small Signal Field-Effect Transistor, 0.22A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN

BSS100E6288 Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	0.22 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	6 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSS 100

SIPMOS

Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

GS(th)

= 0.8...2.0V

Pin 1

Type

Pin 2

Marking

Pin 3

100 V

0.22 A

DS(on)

Ω

Package

BSS 100

Type

BSS 100

TO-92

SS 100

Ordering Code

Q62702-S499

Q62702-S007

Q62702-S206

Tape and Reel Information

E6288

E6296

E6325

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

= 20 k

Ω

DGR

100

Gate source voltage

ESD Sensitivity (HBM) as per MIL-STD 883

Continuous drain current

= 33 ˚C

Class 1

0.22

DC drain current, pulsed

= 25 ˚C

Dpuls

0.9

tot

Power dissipation

= 25 ˚C

0.63

Data Sheet

05.99

BSS100E6288 Related Products

	BSS100E6288	BSS100E6325	BSS100E6296
Description	Small Signal Field-Effect Transistor, 0.22A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.22A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.22A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknow	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (ID)	0.22 A	0.22 A	0.22 A
Maximum drain-source on-resistance	10 Ω	10 Ω	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	6 pF	6 pF	6 pF
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	Infineon	-	Infineon

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