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BSP100-T

Description
TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size89KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BSP100-T Overview

TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BSP100-T Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)3.5 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment5 W
Maximum pulsed drain current (IDM)14 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)75 ns
Maximum opening time (tons)40 ns
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS™ transistor
FEATURES
’Trench’
technology
• Low on-state resistance
• Fast switching
• High thermal cycling performance
• Low thermal resistance
BSP100
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 30 V
I
D
= 6 A
g
R
DS(ON)
100 mΩ (V
GS
= 10 V)
R
DS(ON)
200 mΩ (V
GS
= 4.5 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect transistor in a plastic
envelope
using
’trench’
technology.
Applications:-
• Motor and relay drivers
• d.c. to d.c. converters
• Logic level translator
The BSP100 is supplied in the
SOT223
surface
mounting
package.
PINNING
PIN
1
2
3
4
gate
drain
source
drain (tab)
DESCRIPTION
SOT223
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ
T
sp
= 25 ˚C
T
sp
= 100 ˚C
T
amb
= 25 ˚C
T
sp
= 25 ˚C
T
sp
= 25 ˚C
MIN.
-
-
-
-
-
-
-
-
- 65
MAX.
30
30
±
20
6
1
4.4
3.2
24
8.3
150
UNIT
V
V
V
A
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-amb
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
surface mounted, FR4
board
surface mounted, FR4
board
TYP.
12
70
MAX.
15
-
UNIT
K/W
K/W
1
Continuous current rating limited by package
February 1999
1
Rev 1.000

BSP100-T Related Products

BSP100-T BSP100T/R
Description TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 3.5 A, 30 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Maker NXP NXP
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 3.5 A 3.5 A
Maximum drain-source on-resistance 0.1 Ω 0.1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 14 A 14 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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