BFN36 datasheet, PDF - EEWORLD Datasheet

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BFN36: DescriptionPower Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size40KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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BFN36 Overview

Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

BFN36 Parametric

Parameter Name	Attribute value
Maker	Diodes
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	250 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	70 MHz

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SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 - JANUARY 1996

7

FEATURES:

* High V

CEO

and Low saturation voltage

APPLICATIONS:

* Suitable for video output stages in TV sets

* Switching power supplies

COMPLEMENTARY TYPE - BFN37

PARTMARKING DETAILS - BFN36

Not Recommended for New Design

Please Use FZTA42

BFN36

C

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

:T

stg

VALUE

250

5

500

2

-55 to +150

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

25

40

70

1.5

MHz

pF

MIN.

250

5

100

20

100

0.4

0.9

TYP.

MAX.

V

nA

µ

A

nA

V

UNIT CONDITIONS.

I

C

=100

µ

A

I

C

=1mA

I

E

=100

µ

A

V

CB

=200V

V

CB

=200V, T

amb

=150°C

V

EB

=4V

I

C

=20mA, I

B

=2mA

I

C

=20mA, I

B

=2mA

I

C

=1mA, V

CE

=10V*

I

C

=10mA, V

CE

=10V*

I

C

=30mA, V

CE

=10V*

I

C

=20mA, V

CE

=10V

f=100MHz

V

CB

=30V,f=1MHz

Static Forward Current h

FE

Transfer Ratio

Transition

Frequency

Output Capacitance

f

T

Cobo

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical characteristics graphs see FMMTA42 datasheet.

3 - 46

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