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BFP540ESDE6433

Description
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, SOT-343, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size136KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BFP540ESDE6433 Overview

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, SOT-343, 4 PIN

BFP540ESDE6433 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW NOISE
Shell connectionEMITTER
Maximum collector current (IC)0.08 A
Collector-based maximum capacity0.24 pF
Collector-emitter maximum voltage4 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandL BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)34000 MHz
BFP540ESD
NPN Silicon RF Transistor
Preliminary data
For highest gain low noise amplifier
at 1.8 GHz
Outstanding
G
ms
= 21.0 dB
Noise Figure
F
= 0.9 dB
Gold metallization for high reliability
SIEGET
45 - Line
Exellent ESD performance
typical value > 1000 V (HBM)
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
3
4
2
1
VPS05605
Type
BFP540ESD
Maximum Ratings
Parameter
Marking
AUs
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
Package
-
SOT343
Value
Unit
-
Collector-emitter voltage
T
A
> 0°C
T
A
0°C
V
4
3.5
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
77°C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
12
12
1
80
8
250
150
-65 ... 150
-65 ... 150
Value
290
Unit
mA
mW
°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
K/W
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2005-06-09
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