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BC808-16

Description
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size293KB,2 Pages
ManufacturerRectron
Environmental Compliance  
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Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC808-16 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
RECTRON
BC808
FEATURES
* Power dissipation
P
CM
:
200
mW (Tamb=25
O
C)
* Collector current
I
CM
:
500
mA
* Collector-base voltage
V
(BR)CBO
: 30
V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to +150
O
C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
o
ELECTRICAL CHARACTERISTICS
( @ TA = 25 C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= -100mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= -1mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= -100mA, I
C
=0)
Collector cut-off current (V
CB
= -30V, I
E
=0)
Emitter cut-off current (V
EB
= -4V, I
C
=0)
DC current gain (V
CE
= -1V, I
C
= -100mA)
DC current gain (V
CE
= -1V, I
C
= -500mA)
Collector-emitter saturation voltage (I
C
= -500mA, I
B
= -50mA)
Base - emitter voltage (V
CE
= -1V, I
C
= -500mA)
Transition frequency (V
CE
= -5V, I
C
= -10mA, f= 50MH
Z
)
Collector output capacitance (V
CB
= -10V, I
E
= 0, f= 1MH
Z
)
CLASSIFICATION OF h
FE(1)
RANK
Range
Marking
16
100-250
5E
25
160-400
5F
40
250-600
5G
2006-3
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
MIN
-30
-25
-5
-
-
100
40
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
100
12
MAX
-
-
-
-0.1
-0.1
600
-
-0.7
1.2
-
-
UNITS
V
V
V
mA
mA
-
-
V
V
MHz
pF
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