
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | TT Electronics plc |
| package instruction | CHIP CARRIER, R-CBCC-N3 |
| Reach Compliance Code | compliant |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 8 A |
| Collector-emitter maximum voltage | 400 V |
| Configuration | SINGLE |
| JEDEC-95 code | TO-276AB |
| JESD-30 code | R-CBCC-N3 |
| JESD-609 code | e4 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | GOLD |
| Terminal form | NO LEAD |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 20 MHz |
