BFQ231A-AMMO datasheet, PDF - EEWORLD Datasheet

BFQ231A-AMMO: DescriptionTRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size82KB，4 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BFQ231A-AMMO Overview

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal

Parameter Name	Attribute value
Maker	NXP
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	95 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power consumption environment	1 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1200 MHz

	BFQ231A-AMMO	BFQ231-AMMO
Description	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal
Maker	NXP	NXP
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.3 A	0.3 A
Collector-emitter maximum voltage	95 V	65 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN
Maximum power consumption environment	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	1200 MHz	1400 MHz

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