MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR2PM
OUTLINE DRAWING
Dimensions
in mm
10.5
MAX
5.2
2.8
5.0
1.2
TYPE
NAME
17
φ3.2 ±
0.2
13.5
MIN
3.6
VOLTAGE
CLASS
1.3
MAX
0.8
2.54
2.54
8.5
0.5
2.6
➀➁➂
➁
¡I
T (RMS)
........................................................................ 2A
¡V
DRM
....................................................................... 600V
¡I
RGT
!
, I
RGT
#
....................................................... 10mA
➀
➀
T
1
TERMINAL
➁
T
2
TERMINAL
➂ ➂
GATE TERMINAL
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
4.5
Conditions
Commercial frequency, sine full wave 360° conduction
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
2
10
0.41
1
0.1
6
1
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
½1.
Gate open.
Mar.2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
DRM
V
TM
V
RGT
!
V
RGT
#
I
RGT
!
I
RGT
#
V
GD
R
th (j-a)
Gate non-trigger voltage
Thermal resistance
Gate trigger current
½2
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
½2
@
#
@
#
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=125°C, V
D
=1/2V
DRM
Junction to ambient, Natural convection
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
a
=25°C, I
TM
=1.5A, Instantaneous measurement
Min.
—
—
—
—
—
—
0.1
—
Typ.
—
—
—
—
—
—
—
—
Max.
0.5
1.6
2.0
2.0
10
10
—
40
Unit
mA
V
V
V
mA
mA
V
°C/
W
½2.
Measurement using the gate trigger characteristics measurement circuit.
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
2
TEST PROCEDURE
3
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
10
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
T
j
= 25°C
9
8
7
6
5
4
3
2
1
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar.2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
3
2
GATE VOLTAGE (V)
V
GM
= 6V
V
GT
P
G(AV)
= 0.1W
I
GM
= 1A
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
P
GM
= 1W
I
RGT I ,
I
RGT III
I
RGT I,
I
RGT III
7
V
GD
= 0.1V
5
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
TRANSIENT THERMAL IMPEDANCE (°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
10
3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
10
2
V
RGT I
10
1
NATURAL CONVECTION
NO FINS
PRINT BOARD
t = 1.6mm
SOLDER LAND :
φ2mm
V
RGT III
10
0
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
10
–1
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
1.8
1.6
1.4 360°
CONDUCTION
1.2 RESISTIVE,
1.0 INDUCTIVE
LOADS
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
PRINT BOARD
t = 1.6mm
120
SOLDER LAND :
φ2mm
100
CURVES APPLY
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
RMS ON-STATE CURRENT (A)
Mar.2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
100 (%)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
2
7
5
3
2
10
1
7
5
3
2
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
LACHING CURRENT (mA)
DISTRIBUTION
10
0
7
5
3
2
10
-1
–40
–
T
2
, G
–
TYPICAL
EXAMPLE
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
100 (%)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
TYPICAL EXAMPLE
T
j
= 125°C
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
T
2
, G
TYPICAL
EXAMPLE
+
–
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
TYPICAL EXAMPLE
I
RGT I
160
140
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
100
80
60
III QUADRANT
40
20
I QUADRANT
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
120
I
RGT III
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
2 3 4 5 7 10
1
2 3 4 5 7 10
2
GATE CURRENT PULSE WIDTH (µs)
Mar.2002
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