MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM
OUTLINE DRAWING
15.9 MAX
4
Dimensions
in mm
4.5±0.3
1.5±0.2
φ3.2±0.2
5.0
20.0±0.5
TYPE
NAME
VOLTAGE
CLASS
∗
2
2±0.3
1.0±0.2
1
2
3
4
19.5 MIN
0.6±0.2
5.45 5.45
2.8±0.3
∗
4
24
1
2
33
4
Measurement point of
case temperature
• I
T (RMS)
...................................................................... 30A
• V
DRM
..............................................................400V/600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 50mA
1
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
TO-3P
APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=75°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
30
300
378
5
0.5
10
2
–40 ~ +125
–40 ~ +125
4.8
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V1.
Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
case
V4
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=45A, Instantaneous measurement
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
V3
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
3.0
1.6
2.5
2.5
2.5
50
50
50
—
1.2
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4.
The contact thermal resistance R
th (b-f)
in case of greasing is 0.3°C/W.
Voltage
class
V
DRM
(V)
(dv/dt)
c
Symbol
R
Min.
—
1. Junction temperature
T
j
=125°C
L
20
V/µs
R
—
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=–16A/ms
3. Peak off-state voltage
V
D
=400V
L
20
Unit
Test conditions
Commutating voltage and current waveforms
(inductive load)
8
400
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
12
600
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
500
ON-STATE CURRENT (A)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
T
C
= 25°C
400
300
200
100
0
10
0
10
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
2 3 4 5 7 10
1
2 3 4 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
GATE VOLTAGE (V)
10
1
7
5 V
GT
= 2.5V
3
2
P
G(AV)
=
0.5W
P
GM
= 5W
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
2
7
5
3
2
V
GM
= 10V
10
3
7
5
4
3
2
10
2
7
5
4
3
2
I
FGT I
TYPICAL EXAMPLE
I
RGT I,
I
RGT III
I
GM
= 2A
10
0
7
5
3
2
I
FGT I,
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
GATE CURRENT (mA)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ON-STATE POWER DISSIPATION (W)
50
40
360°
CONDUCTION
30 RESISTIVE,
INDUCTIVE
LOADS
20
CASE TEMPERATURE (°C)
30
50
140
120
100
80
60
40
10
0
0
10
20
40
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
10
20
30
40
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140 ALUMINUM AND GREASED
NATURAL CONVECTION
120
160 160 t2.3
100
80
60
40
20
0
0
10
20
30
40
120 120 t2.3
100 100 t2.3
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60–40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
100 (%)
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
140
TYPICAL EXAMPLE
T
j
= 125°C
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
COMMUTATION CHARACTERISTICS
10
2
7
5
4
3
2
10
1
7
5
4
3
2
MINIMUM
CHARAC-
TERISTICS
VALUE
TYPICAL
EXAMPLE
T
C
= 125°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
100
80
I QUADRANT
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
III QUADRANT
I QUADRANT
III QUADRANT
10
0 1
10
2 3 4 5 7 10
2
2 3 4 5 7 10
3
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
100 (%)
TYPICAL EXAMPLE
I
FGT I
I
RGT III
I
RGT I
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE
3
Feb.1999
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