MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5KM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5KM
OUTLINE DRAWING
10
±
0.3
Dimensions in mm
2.8
±
0.2
15
±
0.3
φ
3.2
±
0.2
14
±
0.5
3.6
±
0.3
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
6.5
±
0.3
3
±
0.3
E
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
4.5
±
0.2
➀➁➂
2.6
±
0.2
½
Measurement point of
case temperature
.................................................................. 5A
q
V
DRM
................................................................. 600V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
................... 15mA (10mA)
½3
q
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
q
I
T (RMS)
➁
➀
➀
T
1
TERMINAL
➁
T
2
TERMINAL
➂ ➂
GATE TERMINAL
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=103°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
5
50
10.4
3
0.3
10
2
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Mar. 2002
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
½1.
Gate open.
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5KM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
R
th (j-a)
Gate trigger
current
½2
Parameter
Repetitive peak off-state current
On-state voltage
!
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=7A, Instantaneous measurement
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
15
½3
15
½3
15
½3
—
3.8
50
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
°C/
W
Gate trigger
voltage
½2
@
#
!
@
#
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=125°C, V
D
=1/2V
DRM
Junction to case
½4
Junction to ambient
Gate non-trigger voltage
Thermal resistance
Thermal resistance
½2.
Measurement using the gate trigger characteristics measurement circuit.
½3.
High sensitivity (I
GT
≤
10mA) is also available. (I
GT
item
➀)
½4.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE
CURRENT
100
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
T
j
= 25°C
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5KM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
10
2
7
5
3
2
100 (%)
GATE CHARACTERISTICS
(Ι,
ΙΙ
AND
ΙΙΙ)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
I
RGT III
10
1
7
5
3
V
GT
= 1.5V
2
P
GM
= 3W
I
GM
= 2A
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
V
GM
= 10V
GATE VOLTAGE (V)
I
FGT I
10
0
7
5
3
2
T
j
= 25°C
I
GT
= 15mA
P
GM
= 0.3W
I
RGT I
V
GD
= 0.2V
10
–1 1
2
2 3 5 7
10
3
2 3 5 7
10
4
10
2 3 5 7
10
GATE CURRENT (mA)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
2 3 5 7
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
7
5
4
3
2
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
10
2
10
9
8 360°
7 CONDUCTION
RESISTIVE,
6 INDUCTIVE
5 LOADS
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10
10
1
7
5
4
3
2
10
0 2
10
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
CONDUCTION TIME
(CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5KM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
140
120
100
80
60
AMBIENT TEMPERATURE (°C)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
120
100
80
60
CURVES APPLY
REGARDLESS OF
40
CONDUCTION ANGLE
RESISTIVE,
20
INDUCTIVE LOADS
NATURAL CONVECTION
120 120 t2.3
100 100 t2.3
60 60 t2.3
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
1
2
3
4
5
6
7
8
0
0
1
2
3
4
5
6
7
8
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7
5
3
2
100 (%)
TYPICAL EXAMPLE
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
100 (%)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
2
10
3
DISTRIBUTION
7
5
7
5
4
3
2
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
TYPICAL
EXAMPLE
3
2
DISTRIBUTION
10
2
7
5
3
2
+
T
2
, G
–
TYPICAL
EXAMPLE
10
1
7
5
4
3
2
10
1
7
5
3
+
+
2
T
2
, G
–
TYPICAL
½
–
V
D
= 12V
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
T
2
, G
EXAMPLE
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR5KM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
140
TYPICAL EXAMPLE
T
j
= 125°C
100 (%)
160
140
TYPICAL EXAMPLE
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
I QUADRANT
III QUADRANT
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
100 (%)
10
3
7
5
4
3
2
I
RGT III
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
6V
I
RGT I
V
A
R
G
6V
V
A
R
G
10
2
7
5
4
3
2
TEST PROCEDURE
1
I
FGT I
6Ω
TEST PROCEDURE
2
6V
10
1 0
10
2
3 4 5 7
10
1
2
3 4 5 7
10
2
A
V
R
G
GATE TRIGGER PULSE WIDTH (µs)
TEST PROCEDURE
3
Mar. 2002
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