Preliminary
Datasheet
BCR8CS-12LB
600V-8A-Triac
Medium Power Use
Features
I
T (RMS)
: 8 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA (20 mA)
Note6
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
R07DS0223EJ0500
Rev.5.00
Oct 19, 2015
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
RENESAS Package code: PR
PRSS0004AB-A
20S)
0S)
(Package name: TO-220S)
1
2
3
L
EO
1
2
4
4
KG
P
2, 4
3
1
3
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
RENESAS Package code: PRSS0004AS-A
(Package name: TO-263)
4
RENESAS Package code: PRSS0004AR-A
(Package name: TO-262)
1 2 3
1 23
Applications
Solid state relay, hybrid IC
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
R07DS0223EJ0500 Rev.5.00
Oct 19, 2015
Page 1 of 9
BCR8CS-12LB
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Ratings
8
80
26
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Conditions
Preliminary
Commercial frequency, sine full wave
360° conduction, Tc = 130C
Note3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
2.0
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 12 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C/150C, V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Tj = 125C/150C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Note5
Notes: 2.
3.
4.
5.
6.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured on the T
2
tab.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (I
GT
20mA) is also available. (I
GT
item: 1)
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0223EJ0500 Rev.5.00
Oct 19, 2015
Page 2 of 9
BCR8CS-12LB
Preliminary
Performance Curves
Maximum
On-State
Characteristics
10
2
7
5
100
Rated
Surge
On-State
Current
Surge
On-State
Current (A)
3.5
4.0
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State
Current (A)
3
2
10
1
7
5
3
2
10
0
7
5
0.5
Tj = 150°C
Tj = 25°C
1.0
1.5
2.0
2.5
3.0
On-State
Voltage (V)
Conduction
Time
(Cycles at
60Hz)
Gate Trigger
Current (Tj
=
t°C)
×
100
(%)
Gate Trigger
Current (Tj
= 25°C)
Gate
Characteristics (I,
II
and
III)
3
2
Gate Trigger
Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
V
GM
= 10V
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
Typical Example
I
RGT III
Gate
Voltage (V)
10
1
7
5
3
V
GT
= 1.5V
2
10
0
7
5
3
2
I
FGT I
, I
RGT I
10
–1
7
I
FGT I
I
RGT I
, I
RGT III
V
GD
= 0.1V
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
–
60
–
40
–
20
0 20 40 60 80 100 120140160
Gate
Current (mA)
Junction Temperature
(°C)
Gate Trigger
Voltage (Tj
=
t°C)
×
100
(%)
Gate Trigger
Voltage (Tj
= 25°C)
Gate Trigger
Voltage vs.
Junction Temperature
Typical Example
Maximum
Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance
(°C/W)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
2
2 3 5 7 10
3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
1
–
60
–
40
–
20 0 20 40 60 80 100120140160
Junction Temperature
(°C)
Conduction
Time
(Cycles at
60Hz)
R07DS0223EJ0500 Rev.5.00
Oct 19, 2015
Page 3 of 9
BCR8CS-12LB
Preliminary
Allowable
Case
Temperature
vs.
RMS On-State
Current
160
140
Maximum
On-State Power
Dissipation
16
On-State Power
Dissipation (W)
14
12
360°
Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
Case
Temperature
(°C)
Curves apply
regardless of
conduction angle
120
100
80
60
40
360°
Conduction
20
Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
16
RMS On-State
Current (A)
RMS On-State
Current (A)
Allowable Ambient Temperature
vs.
RMS On-State
Current
160
Allowable Ambient Temperature
vs.
RMS On-State
Current
160
Ambient Temperature
(°C)
120
100
80
60
40
20
0
0
2
4
6
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural
convection
8
10
12
14
16
Ambient Temperature
(°C)
140
All fins
are
black
painted
aluminum and greased
140
120
100
80
60
40
20
0
0
0.5
Natural
convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
1.0
1.5
2.0
2.5
3.0
RMS On-State
Current (A)
RMS On-State
Current (A)
Repetitive Peak Off-State
Current (Tj
=
t°C)
×
100
(%)
Repetitive Peak Off-State
Current (Tj
= 25°C)
Repetitive Peak Off-State
Current vs.
Junction Temperature
10
6
7
Typical Example
5
3
2
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–
60
–
40
–
20 0 20 40 60 80 100120 140160
Holding
Current vs.
Junction Temperature
Holding
Current (Tj
=
t°C)
×
100
(%)
Holding
Current (Tj
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
10
1
–
60
–
40
–
20 0 20 40 60 80 100120140160
Junction Temperature
(°C)
Junction Temperature
(°C)
R07DS0223EJ0500 Rev.5.00
Oct 19, 2015
Page 4 of 9
BCR8CS-12LB
Latching
Current vs.
Junction Temperature
Breakover
Voltage (Tj
=
t°C)
×
100
(%)
Breakover
Voltage (Tj
= 25°C)
10
3
7
5
3
2
Preliminary
Breakover
Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
–
60
–
40
–
20
Latching
Current (mA)
Distribution
T
2
+, G–
Typical Example
10
2
7
5
3
2
10
1
7
5
3
+ +
2
T
2
, G Typical Example
T
2
–, G–
10
0
–
40
0
0
40
80
120
160
0 20 40 60 80 100120140160
Junction Temperature
(°C)
Junction Temperature
(°C)
Breakover
Voltage (dv/dt
= xV/μs)
×
100
(%)
Breakover
Voltage (dv/dt
= 1V/μs)
Breakover
Voltage (dv/dt
= xV/μs)
×
100
(%)
Breakover
Voltage (dv/dt
= 1V/μs)
Breakover
Voltage vs.
Rate
of
Rise
of
Off-State
Voltage (Tj=125°C)
160
140
120
Breakover
Voltage vs.
Rate
of
Rise
of
Off-State
Voltage (Tj=150°C)
160
140
120
100
80
60
40
Typical Example
Tj = 125°C
III Quadrant
Typical Example
Tj = 150°C
100
80
60
40
20
III Quadrant
I Quadrant
I Quadrant
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Rate
of
Rise
of
Off-State
Voltage (V/μs)
Rate
of
Rise
of
Off-State
Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Critical
Rate
of
Rise
of
Off-State
Commutating Voltage (V/μs)
Critical
Rate
of
Rise
of
Off-State
Commutating Voltage (V/μs)
7
5
3
2
10
1
7
5
3
2
10
0
7
0
10
III Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Commutation Characteristics (Tj=150°C)
7
5
3
2
10
1
7
5
3
2
I Quadrant
10
0
7
0
10
2 3
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
Typical Example
Tj = 150°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
Minimum
Characteristics
Value
I Quadrant
III Quadrant
Minimum
Characteristics
Value
2 3
5 7 10
1
2 3
5 7 10
2
5 7 10
1
2 3
5 7 10
2
Rate
of Decay of
On-State
Commutating Current (A/ms)
Rate
of Decay of
On-State
Commutating Current (A/ms)
R07DS0223EJ0500 Rev.5.00
Oct 19, 2015
Page 5 of 9
京公网安备 11010802033920号
EEWORLD
