
Silicon Controlled Rectifier, 500mA I(T), 400V V(DRM),
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
| package instruction | , |
| Reach Compliance Code | unknown |
| Nominal circuit commutation break time | 100 µs |
| Critical rise rate of minimum off-state voltage | 25 V/us |
| Maximum DC gate trigger current | 0.2 mA |
| Maximum DC gate trigger voltage | 0.8 V |
| Maximum holding current | 5 mA |
| JESD-609 code | e3 |
| Maximum leakage current | 0.1 mA |
| On-state non-repetitive peak current | 8 A |
| Maximum on-state voltage | 1.3 V |
| Maximum on-state current | 500 A |
| Maximum operating temperature | 125 °C |
| Off-state repetitive peak voltage | 400 V |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) |
| Trigger device type | SCR |
