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BT169DAMO

Description
Silicon Controlled Rectifier, 0.8 A, 400 V, SCR, TO-92, PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size46KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
Download Datasheet Parametric View All

BT169DAMO Overview

Silicon Controlled Rectifier, 0.8 A, 400 V, SCR, TO-92, PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN

BT169DAMO Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-92
package instructionPLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN
Contacts3
Reach Compliance Codecompliant
Other featuresSENSITIVE GATE
Nominal circuit commutation break time100 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage25 V/us
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Maximum leakage current0.1 mA
On-state non-repetitive peak current8 A
Number of components1
Number of terminals3
Maximum on-state current500 A
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current0.8 A
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Philips Semiconductors
Product specification
Thyristors
logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a plastic envelope, intended for use
in general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
BT169 series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT169
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
MAX MAX MAX MAX UNIT
.
.
.
.
B
200
0.5
0.8
8
D
400
0.5
0.8
8
E
500
0.5
0.8
8
G
600
0.5
0.8
8
A
A
V
A
PINNING - TO92 variant
PIN
1
2
3
DESCRIPTION
anode
gate
cathode
PIN CONFIGURATION
SYMBOL
a
k
3 2 1
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave;
T
lead
83 ˚C
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
j
= 25 ˚C prior to surge
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
B
200
1
MAX.
D
400
1
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
150
125
E
500
1
G
600
1
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 2001
1
Rev 1.500
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