Preliminary
Datasheet
BCR3PM-12LA
Triac
Low Power Use
Features
I
T (RMS)
: 3 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 20 mA (10 mA)
Note5
Viso : 2000 V
R07DS0097EJ0300
(Previous: REJ03G0301-0200)
Rev.3.00
Sep 13, 2010
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
2
3
1
1
2
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
Applications
Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid
driver, small motor control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Page 1 of 6
BCR3PM-12LA
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Ratings
3.0
30
3.7
3
0.3
6
0.5
– 40 to +125
– 40 to +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Conditions
Preliminary
Commercial frequency, sine full wave
360° conduction, Tc = 107C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T
1
·T
2
·G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
5
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
20
Note5
20
Note5
20
Note5
—
4.5
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 125C, V
DRM
applied
Tc = 25C, I
TM
= 4.5 A,
Instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2.
3.
4.
5.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (I
GT
10 mA) is also available. (I
GT
item: 1)
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Page 2 of 6
BCR3PM-12LA
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
Tj = 25°C
5
3
2
10
7
5
3
2
10
0
7
5
3
2
10
–1
1
Rated Surge On-State Current
40
Surge On-State Current (A)
35
30
25
20
15
10
5
0
0
10
2 3
5 7 10
1
On-State Current (A)
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
2 3
5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
10
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
I
RGT III
Typical Example
Gate Voltage (V)
P
GM
= 3W
P
G(AV)
= 0.3W
V
GT
I
GM
=
0.5A
10
2
I
I
7
FGT I, RGT I
5
3
2
10
1
–60 –40–20 0 20 40 60 80 100 120 140
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.2V
10
–1 0
10 2 3 5 710
1
2 3 5 710
2
2 3 5 710
3
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
7
5
3
2
10
2
7
5
3
2
10
–60 –40–20 0 20 40 60 80 100 120 140
1
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 710
3
2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–1
10 2 3 5 710
0
2 3 5 710
1
2 3 5 710
2
3
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Page 3 of 6
BCR3PM-12LA
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
Maximum On-State Power Dissipation
On-State Power Dissipation (W)
5.0
4.5
4.0
Case Temperature (°C)
140
120
100
Curves apply regardless
of conduction angle
3.5
Resistive,
3.0
inductive loads
2.5
2.0
1.5
1.0
0.5
0
0
360° Conduction
80
60
40
360° Conduction
20
Resistive,
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
0
inductive loads
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Allowable Ambient Temperature vs.
RMS On-State Current
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Ambient Temperature (°C)
Ambient Temperature (°C)
140
120
100
80
140
120
100
80
60
40
20
0
0
0.5
1.0
60
All fins are black painted
aluminum and greased
40
Curves apply regardless
of conduction angle
20
Resistive, inductive loads
Natural convection
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
7
5
3
2
10
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40–20 0 20 40 60 80 100 120 140
4
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
5
Typical Example
10
3
7
5
3
2
10
2
7
5
3
2
Typical Example
10
1
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Page 4 of 6
BCR3PM-12LA
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
7
5
3
2
10
7
5
3
T
2
+, G+
Typical Example
2
T
2
–, G–
0
10
–60 –40–20 0 20 40 60 80 100 120 140
1
2
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Typical Example
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Distribution
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140
Latching Current (mA)
T
2
+, G–
Typical Example
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
I Quadrant
III Quadrant
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Typical Example
Tj = 125°C
7
5
3
2
10
7
5
1
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
Minimum
III Quadrant
3
Characteristics
Value
2
10
0
7
0
10
I Quadrant
0
1
10 2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
7
5
3
2
10
2
7
5
3
2
10
0
10
1
3
Typical Example
I
RGT III
I
RGT I
I
FGT I
6V
V
A
6V
A
V
330Ω
330Ω
Test Procedure I
6Ω
Test Procedure II
6V
A
V
2 3
5 7 10
1
2 3
5 7 10
2
330Ω
Gate Current Pulse Width (μs)
Test Procedure III
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Page 5 of 6
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