MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR8CS
OUTLINE DRAWING
Dimensions
in mm
4
1.5 MAX
10.5 MAX
4.5
1.3
1.5 MAX
8.6±0.3
9.8±0.5
TYPE
NAME
∗
3.0
–0.5
+0.3
0
–0
+0.3
VOLTAGE
CLASS
1
5
0.8
0.5
1 2 3
24
2.6±0.4
4.5
∗
Measurement
point of case
temperature
• I
T (RMS)
........................................................................ 8A
• V
DRM
..............................................................400V/600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 30mA (20mA)
V5
APPLICATION
Solid state relay, hybrid IC
1
1
2
3 3
4
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
TO-220S
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=105°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
8
80
26
5
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V1.
Gate open.
Feb.1999
(1.5)
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
case
V4
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=12A, Instantaneous measurement
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
V3
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
30
V5
30
V5
30
V5
—
2.0
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4.
The contact thermal resistance R
th (c-f)
is 1.0°C/W.
V5.
High sensitivity (I
GT
≤20mA)
is also available. (I
GT
item
1)
(dv/dt)
c
Symbol
R
8
400
L
10
V/µs
R
12
600
L
10
—
Min.
—
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=–4A/ms
3. Peak off-state voltage
V
D
=400V
Unit
Test conditions
Voltage
class
V
DRM
(V)
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
100
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
T
j
= 125°C
T
j
= 25°C
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
3
2
GATE VOLTAGE (V)
10
1
7
5
3
2
10
0
7
5
3
2
I
FGT I
I
RGT I,
I
RGT III
10
–1
V
GD
= 0.2V
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
V
GM
= 10V
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
V
GT
= 1.5V
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
I
RGT III
I
RGT I
I
FGT I
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10
2
2 3 5 7 10
3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
16
CASE TEMPERATURE (°C)
14
12 360°
CONDUCTION
10 RESISTIVE,
INDUCTIVE
8 LOADS
6
4
2
0
0
2
4
6
8
10
12
14
16
160
140
120
100
80
60
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
8
10
12
14
16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
AMBIENT TEMPERATURE (°C)
100
80
60
RESISTIVE,
40 INDUCTIVE
LOADS
20 NATURAL
CONVECTION
0
0
2
4
6
120 120 t2.3
100 100 t2.3
60 60 t2.3
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE COPPER
AND ALUMINUM
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
8
10
12
14
16
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
100 (%)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT (mA)
10
0
–40
+
T
2
, G
+
TYPICAL
½
–
T
2
, G
–
EXAMPLE
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION
+
T
2
, G
–
TYPICAL
EXAMPLE
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
160
140
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
TYPICAL EXAMPLE
T
j
= 125°C
COMMUTATION CHARACTERISTICS
3 TYPICAL
2 EXAMPLE
10
2
T
j
= 125°C
7 I
T
= 4A
5
τ
= 500µs
3 V
D
= 200V
2 f = 3Hz
VOLTAGE WAVEFORM
t
(dv/dt)
C
V
D
CURRENT WAVEFORM
(di/dt)
C
I
T
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
100
80
60
40
20
I QUADRANT
III QUADRANT
τ
t
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
10
1
7
I QUADRANT
5
3 MINIMUM
2 CHARAC-
10
0
TERISTICS III QUADRANT
7 VALUE
5
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
100 (%)
TYPICAL EXAMPLE
I
FGT I
I
RGT I
I
RGT III
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE
3
Feb.1999
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