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2SB508E

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size588KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SB508E Overview

Transistor

2SB508E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid101476905
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)160
JESD-609 codee0
Maximum operating temperature140 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)30 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)8 MHz

2SB508E Related Products

2SB508E 2SB508C 2SB508D 2SB508F
Description Transistor Transistor Transistor Transistor
Is it Rohs certified? incompatible incompatible incompatible incompatible
Objectid 101476905 101476903 101476904 101476906
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 3 A 3 A 3 A 3 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 160 40 60 160
JESD-609 code e0 e0 e0 e0
Maximum operating temperature 140 °C 140 °C 140 °C 140 °C
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 30 W 30 W 30 W 30 W
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 8 MHz 8 MHz 8 MHz 8 MHz
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