TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,20A I(D),TO-204AE
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | _compli |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 20 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 150 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| 2N7295R1 | 2N7295D3 | 2N7295H1 | 2N7295D2 | |
|---|---|---|---|---|
| Description | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,20A I(D),TO-204AE | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,20A I(D),TO-204AE | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,20A I(D),TO-204AE | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,20A I(D),TO-204AE |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | _compli | _compli | _compli | _compli |
| Configuration | Single | Single | Single | Single |
| Maximum drain current (Abs) (ID) | 20 A | 20 A | 20 A | 20 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 150 W | 150 W | 150 W | 150 W |
| surface mount | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 | 1 | 1 | 1 |