2SA1203
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1203
Audio Frequency Amplifier Applications
•
•
•
•
Suitable for output stage of 3 watts amplifier
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SC2883
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
−30
−30
−5
−1.5
−0.3
500
1000
150
−55
to 150
2
Unit
V
V
V
A
A
mW
PW-MINI
JEDEC
―
SC-62
2-5K1A
°C
°C
JEITA
TOSHIBA
Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t)
Weight: 0.05 g (typ.)
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2004-07-07
2SA1203
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
(BR) CEO
V
(BR) EBO
h
FE
(Note 2)
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
=
−30
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
I
C
=
−10
mA, I
B
= 0
I
E
=
−1
mA, I
C
= 0
V
CE
=
−2
V, I
C
=
−500
mA
I
C
=
−1.5
A, I
B
=
−0.03
A
V
CE
=
−2
V, I
C
=
−500
mA
V
CE
=
−2
V, I
C
=
−500
mA
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
Min
―
―
−30
−5
100
―
―
―
―
Typ.
―
―
―
―
―
―
―
120
―
Max
−0.1
−0.1
―
―
320
−2.0
−1.0
―
50
V
V
MHz
pF
Unit
µA
µA
V
V
Note 2: h
FE
classification
O: 100 to 200, Y: 160 to 320
Marking
Part No. (or abbreviation code)
H
Lot No.
Characteristics indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2004-07-07
2SA1203
I
C
– V
CE
−10
−1.2
3000
−8
−6
Common emitter
h
FE
– I
C
Common emitter
VCE
= −2
V
Ta
=
100°C
25
−25
I
C
(A)
h
FE
DC current gain
Ta
=
25°C
1000
500
300
−4
−0.8
−3
−2
−0.4
IB
= −1
mA
Collector current
100
50
30
10
−1
−3
−10
−30
−100
−300
−1000 −3000
0
0
0
−4
−8
−12
−16
Collector current
I
C
(mA)
Collector-emitter voltage
V
CE
(V)
V
CE (sat)
– I
C
−3
−1.6
Common emitter
−1
−0.5
−0.3
−0.1
−0.05
−0.03
−0.01
−1
Ta
=
100°C
25
−25
−3
−10
−30
−100
−300
−1000 −3000
IC/IB
=
50
I
C
– V
BE
Common emitter
VCE
= −2
V
Collector-emitter saturation voltage
V
CE (sat)
(V)
I
C
(A)
Collector current
−1.2
−0.8
Ta
=
100°C 25
−25
−0.4
Collector current
I
C
(mA)
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage
V
BE
(V)
Safe Operating Area
−3000
IC max (pulse)*
10 ms*
1 ms*
P
C
– Ta
1.2
P
C
(W)
I
C
(mA)
IC max
−1000
(continuous)
−500
−300
100 ms*
1.0
(1)
(1) Mounted on a ceramic
2
substrate (250 mm
×
0.8 t)
(2) No heat sink
Collector current
DC operation
Ta
=
25°C
−100
*:
Single nonrepetitive pulse
−50
−30
Ta
=
25°C
Curves must be derated
linearly with increase in
−10
−5
−0.1
temperature.
Tested without a substrate.
−0.3
−1
−3
VCEO max
−10
−30
−100
Collector power dissipation
0.8
0.6
(2)
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Collector-emitter voltage
V
CE
(V)
Ambient temperature
Ta
(°C)
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2004-07-07
2SA1203
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
030619EAA
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2004-07-07
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