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2SC1969

Description
Power Bipolar Transistor, 6A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size142KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

2SC1969 Overview

Power Bipolar Transistor, 6A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin,

2SC1969 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SC1969
SILICON POWER NPN TRANSISTOR
DESCRIPTION:
The
ASI 2SC1969
is an epitaxial
planar type transistor designed for RF
power amplifiers on HF bland mobile
radio applications.
PACKAGE STYLE TO-220AB
MAXIMUM RATINGS
I
C
V
CEO
P
DISS
T
J
T
STG
θ
JC
6.0 A
25 V
20 W @ T
C
= 25 °C
-55 °C to +150 °C
-55 °C to +150 °C
6.25 °C/W
1 = Base 2 = Collector 3 = Emitter
4 = Collector
TRANS1.SYM
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
P
O
η
C
I
C
= 10 mA
T
C
= 25 °C
TEST CONDITIONS
I
C
= 1.0 mA
I
E
= 5.0 mA
V
CB
= 30 V
V
EB
= 4.0 V
V
CE
= 12 V
V
CC
= 12 V
V
CC
= 12 V
I
C
= 10 mA
P
IN
= 1.0 W
P
IN
= 1.0 W
f = 27 MHz
f = 27 MHz
MINIMUM
25
60
5.0
TYPICAL
MAXIMUM
UNITS
V
V
V
100
100
10
16
60
50
18
70
180
µA
µA
---
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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