HSMBJLCR60, e3
LOW CAPACITANCE RECTIFIER
SCOTTSDALE DIVISION
DESCRIPTION
The HSMBJLCR60 low capacitance rectifier is used in parallel applications with a
low-capacitance t
ransient voltage suppressor (TVS) such as the
APPEARANCE
WWW .
Microsemi
.C
OM
HSMBJSAC5.0-50 series for unidirectional applications as shown in Figure 4.
It is rated for 44 Amp forward surges to compliment this 500 Watt TVS series
and also provide a low capacitance and a low forward (V
F
) voltage with fast
response time. The low capacitance rating of 30 pF when used in parallel to
the HSMBJSAC series will result in a total capacitance of 60 pF or less at
zero volts for protecting higher frequency applications from inductive
switching threats or electrical systems involving secondary lightning effects
per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne
avionics. With their fast response time, they also provide ESD and EFT
protection per IEC61000-4-2 and IEC61000-4-4 respectively.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
DO-214AA
See package notes
FEATURES
•
•
•
Suppresses transient in forward direction up to 500
Watts Peak Pulse Power @ 10/1000 µs
Economical small plastic surface mount with robust
axial subassembly package
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for
added 100% temperature cycle -55
o
C to +125
o
C
(10X) as well as surge (3X) and 24 hours HTRB with
post test V
Z
& I
R
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, or MSP prefixes
respectively to part number, e.g. MXHSMBJLCR60,
MVHSMBJLCR60, etc.
Also available in axial-leaded package with part
number LCR60 (see separate data sheet)
RoHS Compliant devices available by adding “e3” suffix
•
APPLICATIONS / BENEFITS
Low-capacitance Rectifier to compliment the low
capacitance TVS series for unidirectional
applications
Improved performance in low capacitance of 30 pF
Low Capacitance for data-line protection to 10 MHz
Protection for aircraft fast data rate lines per select
level waveforms in RTCA/DO-160D & ARINC 429
with bit rates of 100 kb/s (per ARINC 429, Part 1,
par. 2.4.1.1)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance in the forward
direction for Class 1, 2, 3, and 4
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance in the forward
direction for Class 1, 2, and 3
•
•
•
•
•
•
•
•
•
MAXIMUM RATINGS
•
•
•
Forward Peak Pulse Current at 25 C: 44 Amps @ 10/1000
μs
o
MECHANICAL AND PACKAGING
•
•
•
•
•
CASE: Void Free Transfer Molded Thermosetting Plastic
epoxy body meeting UL94V-0
FINISH: Tin-lead or RoHS Compliant annealed matte-Tin
plating readily solderable per MIL-STD-750, method 2026
POLARITY: Cathode Marked with Band
MARKING: Part number without HSMBJ prefix (e.g.
LCR60 or LCR60e3)
WEIGHT: 0.1 Grams (Approx.)
with repetition rate of 0.01% or less*
Steady State Power Dissipation* at T
L
= +75 C: 2.5 Watts.
Clamping Speed (0 volts to V
(BR)
Min.) less than 5
nanoseconds.
Operating and Storage Temperature: -65 C to +150 C.
o
o
o
•
HSMBJLCR60, e3
ELECTRICAL CHARACTERISTICS @ 25 C
o
MICROSEMI
PART NUMBER
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
Volts
200
REVERSE
BREAKDOWN
VOLTAGE
@ I
(BR)
1.0mA
V
(BR)
Volts
Min.
220
REVERSE
CURRENT
@V
RWM
I
R
μA
MAXIMUM
FORWARD
VOLTAGE
@ I
PP
V
F
Volts
MAXIMUM
PEAK PULSE
CURRENT*
RATING
I
PP
Amps
44
CAPACITANCE
@ 0 Volts
pF
30
HSMBJLCR60
HSMBJLCR60e3
*See Figure 3
Copyright
©
2005
9-12-2005 REV A
10
7.0
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
HSMBJLCR60, e3
LOW CAPACITANCE RECTIFIER
SCOTTSDALE DIVISION
GRAPHS
WWW .
Microsemi
.C
OM
Peak Power
(Single Pulse)
Average
Power
T
L
– Lead Temperature – C
o
I
PP
– Peak Pulse Current - % I
PP
% of Rated Power
t – Time – ms
FIGURE 2
FIGURE 3
SCHEMATIC APPLICATIONS
A typical low capacitance TVS device configuration is shown in Figure 4 when used with a separate rectifier to maintain low capacitance. As
shown, an additional low capacitance rectifier diode is used in parallel in the same polarity direction as the TVS. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode within the TVS and
also provide a low voltage conducting direction. This added rectifier diode such as the HSMBJLCR60 is of similar low capacitance as the TVS
and also has a higher reverse voltage rating than the TVS clamping voltage V
C
. The unidirectional configuration in Figure 4 will result in twice the
capacitance of the HSMBJSACxxx series of low capacitance TVSs that are rated at 30 pF maximum. This results in a total of 60 pF maximum in
this parallel configuration since the HSMBJLCR60 is also the same capacitance value of 30 pF.
PACKAGE
DIMENSIONS
HSMBJLCR60
Low Capacitance
Rectifier
HSMBJSACxxx
(low capacitance TVS)
FIGURE 4
Unidirectional configuration of
Low Capacitance TVS (such as
the HSMBJSAC5.0-50 series) and
a separate HSMBJLCR60 rectifier
in parallel)
DI
M
A
B
C
D
E
F
G
DIMENSIONS
INCHES
MILLIMETER
S
MIN
MAX MIN
MA
X
.073
.087 1.85
2.2
1
.160
.180 4.06
4.5
7
.130
.155 3.30
3.9
4
.205
.220 5.21
5.5
9
.075
.130 1.91
3.3
0
.030
.060
.76
1.5
2
.006
.016
.15
.41
HSMBJLCR60, e3
NOTE: Dimension E
exceeds the JEDEC outline
in height as shown
Copyright
©
2005
9-12-2005 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Embedded System
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