Ordering number:ENN2047A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1167/2SD1724
100V/3A Switching Applications
Features
· Relay drivers, high-speed inverters, converters.
Package Dimensions
unit:mm
2043B
[2SB1167/2SD1724]
8.0
4.0
2.0
2.7
Features
· Low collector-to-emitter saturation voltage.
· High f
T
.
· Excellent linearity of h
FE
.
· Fast switching time.
1.6
0.8
1.5
0.8
0.6
3.0
15.5
9.0
11.0
0.5
1
2
3
( ) : 2SB1167
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
4.8
1.2
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Ratings
(–)120
(–)100
(–)6
(–)3
(–)6
1.2
Unit
V
V
V
A
A
W
W
Tc=25˚C
20
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)0.5A
VCE=(–)5V, IC=(–)2A
VCE=(–)10V, IC=(–)0.5A
70*
40
(130)
180
R
100 to 200
S
140 to 280
T
200 to 400
Conditions
Ratings
min
typ
max
(–)1
(–)1
400*
Unit
µA
µA
MHz
MHz
* : The 2SB1167/2SD1724 are classified by 0.5A h
FE
as follows :
Rank
hFE
Q
70 to 140
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo
http://semicon.sanyo.com/en/network
TOKYO, 110-8534 JAPAN
Bldg., 1-10,
Chome,
Ueno,
Taito-ku,
TOKYO OFFICE Tokyo Bldg., 1-10, 1
1 Chome,
Ueno,
Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2047–1/4
2SB1167/2SD1724
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=(–)10V, f=1MHz
IC=(–)1.5A, IB=(–)0.15A
Ratings
min
typ
25(40)
(–200)
150
(–)0.9
(–)120
(–)100
(–)6
(100)
100
900
(800)
50(50)
(–500)
400
(–)1.2
max
Unit
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
ns
IC=(–)1.5A, IB=(–)0.15A
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=25V
RB
RL
IC=10IB1= --10IB2=1.5A
(For PNP, the polarity is reversed.)
--2.0
IC -- VCE
2SB1167
From top
--20mA
--18mA
--16mA
--14mA
--12mA
Collector Current, IC – A
2.0
IC -- VCE
2SD1724
From top
20mA
18mA
16mA
14mA
Collector Current, IC – A
--1.6
--10mA
1.6
A
12m
A
10m
8mA
--8mA
--6mA
--1.2
1.2
6mA
0.8
--0.8
--4mA
--2mA
4mA
2mA
IB=0
0
1
2
3
4
5
ITR09113
--0.4
0.4
0
0
--1
--2
--3
IB=0
--4
--5
ITR09112
0
Collector-to-Emitter Voltage, VCE – V
--1.0
Collector-to-Emitter Voltage, VCE – V
1.0
IC -- VCE
2SB1167
--4.
mA
--3.5
A
--3.0m
0mA
IC -- VCE
A
5.0m
A
4.5m
4.0mA
3.5mA
2SD1724
Collector Current, IC – A
Collector Current, IC – A
--0.8
0.8
--0.6
A
--2.5m
--2.0mA
0.6
3.0mA
2.5mA
0.4
--0.4
--1.5mA
--1.0mA
2.0mA
1.5mA
--0.2
--0.5mA
IB=0
0
--10
--20
--30
--40
--50
ITR09114
0.2
1.0mA
0.5mA
0
0
0
10
20
IB=0
30
40
50
ITR09115
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
No.2047–2/4
2SB1167/2SD1724
--3.5
IC -- VBE
2SB1167
VCE= --5V
Collector Current, IC – A
3.5
IC -- VBE
2SD1724
VCE=5V
--3.0
3.0
Collector Current, IC – A
--2.5
2.5
--2.0
2.0
--1.5
1.5
Ta=7
5
0
0.2
0.4
0.6
--1.0
Ta=7
5
°
C
25
°
C
--25
°
C
1.0
--0.5
0
0
--0.2
--0.4
0.5
0
--0.6
--0.8
--1.0
--1.2
ITR09116
1000
25
°
C
--25
°
C
0.8
°
C
1.0
1.2
ITR09117
Base-to-Emitter Voltage, VBE – V
1000
Base-to-Emitter Voltage, VBE – V
hFE -- IC
2SB1167
VCE= --5V
hFE -- IC
2SD1724
VCE=5V
Ta=75°C
25°C
--25°C
7
5
3
5
3
DC Current Gain, hFE
2
DC Current Gain, hFE
2
3
5
--10
ITR09118
Ta=75°C
25
°
C
--25°C
2
100
100
7
5
3
2
10
7
5
5
3
2
10
5
5
--0.01
2
3
5
Collector Current, IC – A
--0.1
2
3
5
--1.0
5
0.01
2
3
5
Collector Current, IC – A
0.1
2
3
5
1.0
2
3
5
10
ITR09119
5
f T -- IC
Output Capacitance, Cob -- pF
2
Cob -- VCB
2SB1167 /
2SD1724
f=1MHz
Gain-Bandwidth Product, fT – MHz
3
2
2SB1167 /
2SD1724
VCE=10V
2SD1724
2SB
116
7
100
7
5
100
7
5
3
2
2SB
3
2
2S
D1
116
7
724
10
7
10
2
3
5
7
0.1
(For PNP, minus sign is omitted.)
2
3
5
7
1.0
2
3
5
5
7 1.0
2
3
5
(For PNP, minus sign is omitted.)
7
10
2
3
5
Collector Current, IC – A
5
3
ITR09120
5
3
Collector-to-Base Voltage, VCB -- V
7 100
2
ITR09121
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
VCE(sat) -- IC
2SD1724
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2
2SB1167
IC / IB=10
2
--1000
5
3
2
--100
5
3
2
--10
5
--0.01
2
3
5
--0.1
2
3
5
--1.0
2
3
5
1000
7
5
3
2
100
7
5
3
2
10
25
°
C
Ta=75
°
C
°
C
--25
25
°
C
Ta=75
°
C
5
2
3
5
5
°
C
--2
0.1
2
3
5
1.0
2
3
5
10
ITR09123
Collector Current, IC – A
--10
ITR09122
0.01
Collector Current, IC – A
No.2047–3/4
2SB1167/2SD1724
--10
7
VBE(sat) -- IC
2SB1167
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
10
7
5
3
2
VBE(sat) -- IC
2SD1724
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
--1.0
7
5
3
2
5
--0.01
2
3
25
°C
Ta=
--25°C
75
°
C
1.0
7
5
3
2
5
Ta=
--25°C
75
°C
25
°C
5
--0.1
2
3
5
--1.0
2
3
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
Collector Current, IC – A
10
5
3
ITR09124
24
Collector Current, IC – A
ITR09125
ASO
ICP=6A
IC=3A
PC -- Ta
2SB1167 / 2SD1724
2
Collector Dissipation, P
C
– W
20
Collector Current, IC – A
1m
ms
10
1.0
5
3
2
0.1
5
3
2
DC
16
DC
n
tio
era
op
op
s
era
tio
nT
a=
12
s
0m
10
C
5
°
=2
Tc
25
°
C
8
0.01
3
2SB1167 /
2SD1724
Tc=25°C
Single pulse
For PNP, minus sign is omitted.
5
7 1.0
2
3
5
7 10
2
3
5
4
1.2
0
No heat sink
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE – V
7 100
2
ITR09126
Ambient Temperature, Ta – ˚C
ITR09127
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2004. Specifications and information herein are subject
to change without notice.
PS No.2047–4/4
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