IDT6167SAF datasheet, PDF - EEWORLD Datasheet

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IDT6167SAF: DescriptionStandard SRAM, 16KX1, CMOS; Categorystorage storage; File Size636KB，8 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT6167SAF Overview

Standard SRAM, 16KX1, CMOS

IDT6167SAF Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
I/O type	SEPARATE
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	1
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DFP
Encapsulate equivalent code	FL(UNSPEC)
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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IDT6167SAF Related Products

	IDT6167SAF	IDT6167SAE	IDT6167SART	IDT6167LAE	IDT6167LAF	IDT6167LART
Description	Standard SRAM, 16KX1, CMOS	Standard SRAM, 16KX1, CMOS	Standard SRAM, 16KX1, CMOS	Standard SRAM, 16KX1, CMOS	Standard SRAM, 16KX1, CMOS	Standard SRAM, 16KX1, CMOS
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1	1	1
word count	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	16KX1	16KX1	16KX1	16KX1	16KX1	16KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Encapsulate equivalent code	FL(UNSPEC)	FL(UNSPEC)	DIE OR CHIP	FL(UNSPEC)	FL(UNSPEC)	DIE OR CHIP
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD
Maximum time at peak reflow temperature	30	30	30	30	30	30
Package body material	CERAMIC	CERAMIC	-	CERAMIC	CERAMIC	-
encapsulated code	DFP	DFP	-	DFP	DFP	-
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-
Package form	FLATPACK	FLATPACK	-	FLATPACK	FLATPACK	-
surface mount	YES	YES	-	YES	YES	-
Terminal form	FLAT	FLAT	-	FLAT	FLAT	-
Terminal location	DUAL	DUAL	-	DUAL	DUAL	-

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