LL4151/F4 datasheet, PDF - EEWORLD Datasheet

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LL4151/F4: DescriptionRectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, GLASS, MINIMELF-2; CategoryDiscrete semiconductor diode; File Size114KB，3 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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LL4151/F4 Overview

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, GLASS, MINIMELF-2

LL4151/F4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
Parts packaging code	MELF
package instruction	O-LELF-R2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	FAST SWITCHING
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	O-LELF-R2
JESD-609 code	e0
Maximum non-repetitive peak forward current	0.5 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	0.15 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WRAP AROUND
Terminal location	END

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LL4151

Vishay Semiconductors

formerly General Semiconductor

Small-Signal Diode

MiniMELF (SOD-80C)

Cathode Band

Reverse Voltage

75V

Forward Current

150mA

Features

• Silicon Epitaxial Planar Diode

• Fast switching diode in MiniMELF case especially

suited for automatic insertion.

• This diode is also available in other case styles

including the DO-35 case with the type designation

1N4151 and the SOD-123 case with the type

designation 1N4151W.

.063 (1.6)

Dia.

.051 (1.3)

.146 (3.7)

.130 (3.3)

.019 (0.48)

.011 (0.28)

Mechanical Data

Case:

MiniMELF Glass Case (SOD-80C)

Weight:

approx. 0.05g

Cathode Band Color:

Black

Packaging Codes/Options:

F4/10K per 13” reel (8mm tape), 50K/box

A

Dimensions in inches and (millimeters)

Maximum Ratings and Thermal Characteristics

(T

Parameter

Reverse Voltage

Peak Reverse Voltage

Forward DC Current at T

amb

= 25°C

(1)

Average Rectified Current

(Half Wave Rectification with Resist. Load at Tamb = 25°C f

≥

50Hz)

(1)

= 25°C unless otherwise noted)

Symbol

V

R

V

RM

I

F

I

F(AV)

I

FSM

P

tot

R

θJA

T

j

T

S

Limit

50

75

200

150

500

350

175

–65 to +175

Unit

V

mA

mW

°C/W

°C

Surge Forward Current at t < 1s and Tj = 25°C

Power Dissipation at T

amb

= 25°C

(1)

Thermal Resistance Junction to Ambient Air

(1)

Junction Temperature

Storage Temperature

Electrical Characteristics

(T

Parameter

Forward Voltage

Leakage Current

Capacitance

J

= 25°C unless otherwise noted)

Symbol

V

F

I

R

C

tot

Test Condition

I

F

= mA

V

R

= 50V

V

R

= 50V, T

J

= 150°C

V

F

= V

R

= 0

I

F

= 10mA, I

R =

10mA

I

rr =

1mA, R

L

= 100Ω

I

F

= 10mA, I

R =

1mA

V

R =

6V, R

L

= 100Ω

Min

—

0.45

Typ

—

Max

1

50

2

4

2

—

Unit

V

nA

µA

pF

ns

—

Reverse Recovery Time

t

rr

Rectification Efficiency

(See third page)

η

½

f = 100MHz, V

RF

= 2V

Note:

(1) Valid provided that electrodes are kept at ambient temperature

Document Number 88210

14-May-02

www.vishay.com

1

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