AP9974GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
60V
10.5mΩ
74A
S
Description
AP9974 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP9974GJ) are available for low-profile
applications.
G D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
+20
74
48
300
104
0.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.2
62.5
110
Units
℃/W
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1
201412223
AP9974GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=45A
V
GS
=4.5V, I
D
=30A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=60V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=30A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=30A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
60
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
50
-
-
-
43
8
31
14
48
42
67
495
460
1
Max. Units
-
10.5
15
3
-
10
250
+100
69
-
-
-
-
-
-
-
-
1.5
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=48V ,V
GS
=0V
3180 5100
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=30A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
45
40
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9974GH/J-HF
250
120
T
C
=25 C
200
o
10V
7 .0V
5.0V
I
D
, Drain Current (A)
T
C
=150
o
C
100
I
D
, Drain Current (A)
10 V
7 .0V
5.0 V
4.5 V
80
150
4.5V
100
60
40
V
G
= 3.0 V
50
V
G
=3.0V
20
0
0
0
1
2
3
4
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
2.0
I
D
= 30 A
T
C
=25
o
C
Normalized R
DS(ON)
10
1.6
I
D
= 45 A
V
G
=10V
R
DS(ON)
(m
Ω
)
8
1.2
6
0.8
4
0.4
t
rr
-50
0
50
100
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Q
rr
150
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
50
40
1.2
T
j
=150
o
C
30
T
j
=25
o
C
Normalized V
GS(th)
1.2
I
S
(A)
0.8
20
0.4
10
0
0
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9974GH/J-HF
f=1.0MHz
12
10000
I
D
= 30 A
10
V
GS
, Gate to Source Voltage (V)
8
V
DS
= 30 V
V
DS
= 38 V
V
DS
= 48 V
C (pF)
1000
C
iss
6
4
C
oss
C
rss
2
0
0
20
40
60
80
100
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
100
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
100us
I
D
(A)
10
0.2
0.1
1ms
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
0.1
0.05
P
DM
0.02
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
Single Pulse
0.1
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
V
DS
, Drain-to-Source Voltage (V)
Q
rr
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
V
DS
=5V
80
T
j
=25 C
o
T
j
=150 C
o
V
G
Q
G
I
D
, Drain Current (A)
60
4.5V
Q
GS
Q
GD
40
20
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9974GH/J-HF
MARKING INFORMATION
TO-251
9974GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
9974GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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