RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
| Parameter Name | Attribute value |
| Maker | California Eastern Labs |
| package instruction | FLANGE MOUNT, R-CDFM-F2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 15 V |
| Maximum drain current (ID) | 2.5 A |
| FET technology | METAL SEMICONDUCTOR |
| highest frequency band | C BAND |
| JESD-30 code | R-CDFM-F2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 175 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Minimum power gain (Gp) | 9.5 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| NE8500295-6 | NE8500295-8 | NE8500200 | |
|---|---|---|---|
| Description | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET |
| package instruction | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | UNCASED CHIP, R-XUUC-N6 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 15 V | 15 V | 15 V |
| Maximum drain current (ID) | 2.5 A | 2.5 A | 2.5 A |
| FET technology | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| highest frequency band | C BAND | C BAND | C BAND |
| JESD-30 code | R-CDFM-F2 | R-CDFM-F2 | R-XUUC-N6 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 6 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | UNCASED CHIP |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Minimum power gain (Gp) | 9.5 dB | 8 dB | 8 dB |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | FLAT | FLAT | NO LEAD |
| Terminal location | DUAL | DUAL | UPPER |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| Maker | California Eastern Labs | - | California Eastern Labs |
| Shell connection | SOURCE | SOURCE | - |
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