NE64500 datasheet, PDF - EEWORLD Datasheet

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NE64500: DescriptionRF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size244KB，7 Pages; ManufacturerCalifornia Eastern Labs; Websitehttp://www.cel.com/

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NE64500 Overview

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN

NE64500 Parametric

Parameter Name	Attribute value
Maker	California Eastern Labs
package instruction	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.065 A
Collector-based maximum capacity	0.6 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
highest frequency band	L BAND
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	NPN
Minimum power gain (Gp)	11 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8500 MHz

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NE64500 Related Products

	NE64500	NE64535-T2	NE64535-T1	NE64587
Description	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, X Band, Silicon, NPN
Maker	California Eastern Labs	California Eastern Labs	California Eastern Labs	California Eastern Labs
package instruction	UNCASED CHIP, S-XUUC-N2	DISK BUTTON, O-CRDB-F4	DISK BUTTON, O-CRDB-F4	SMALL OUTLINE, R-CDSO-F2
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.065 A	0.065 A	0.065 A	0.065 A
Collector-based maximum capacity	0.6 pF	0.6 pF	0.6 pF	0.6 pF
Collector-emitter maximum voltage	12 V	12 V	12 V	12 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50	50	50
highest frequency band	L BAND	L BAND	L BAND	X BAND
JESD-30 code	S-XUUC-N2	O-CRDB-F4	O-CRDB-F4	R-CDSO-F2
Number of components	1	1	1	1
Number of terminals	2	4	4	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE	ROUND	ROUND	RECTANGULAR
Package form	UNCASED CHIP	DISK BUTTON	DISK BUTTON	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	FLAT	FLAT	FLAT
Terminal location	UPPER	RADIAL	RADIAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8500 MHz	8500 MHz	8500 MHz	8500 MHz
Minimum power gain (Gp)	11 dB	10 dB	10 dB	-

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