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2N3171E3

Description
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size87KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

2N3171E3 Overview

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

2N3171E3 Parametric

Parameter NameAttribute value
Objectid8059220225
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage40 V
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typePNP
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Ultra-wide voltage adaptive power supply
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